Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply.

Graphene has a range of unique physical properties and could be of use in the development of a variety of electronic, photonic and photovoltaic devices. For most applications, large-area high-quality graphene films are required and chemical vapour deposition (CVD) synthesis of graphene on copper surfaces has been of particular interest due to its simplicity and cost effectiveness. However, the rates of growth for graphene by CVD on copper are less than 0.

Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors.

A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.