Atomic-engineered gradient tunable solid-state metamaterials.

Metamaterial has been captivated a popular notion, offering photonic functionalities beyond the capabilities of natural materials. Its desirable functionality primarily relies on well-controlled conditions such as structural resonance, dispersion, geometry, filling fraction, external actuation, etc. However, its fundamental building blocks-meta-atoms-still rely on naturally occurring substances.

Activating Silent Synapses in Sulfurized Indium Selenide for Neuromorphic Computing.

The transformation from silent to functional synapses is accompanied by the evolutionary process of human brain development and is essential to hardware implementation of the evolutionary artificial neural network but remains a challenge for mimicking silent to functional synapse activation. Here, we developed a simple approach to successfully realize activation of silent to functional synapses by controlled sulfurization of chemical vapor deposition-grown indium selenide crystals. The underlying mechanism is attributed to the migration of sulfur anions introduced by sulfurization.

Floating solid-state thin films with dynamic structural colour.

Thin-film architectures are a staple in a wide range of technologies, such as semiconductor devices, optical coatings, magnetic recording, solar cells and batteries. Despite the industrial success of thin-film technology, mostly due to the easy fabrication and low cost, a fundamental drawback remains: it is challenging to alter the features of the film once fabricated. Here we report a methodology to modify the thickness and sequence of the innermost solid-state thin-film layers.

Tunable Resistive Switching Enabled by Malleable Redox Reaction in the Nano-Vacuum Gap.

Neuromorphic computing has emerged as a highly promising alternative to conventional computing. The key to constructing a large-scale neural network in hardware for neuromorphic computing is to develop artificial neurons with leaky integrate-and-fire behavior and artificial synapses with synaptic plasticity using nanodevices. So far, these two basic computing elements have been built in separate devices using different materials and technologies, which poses a significant challenge to system design and manufacturing.

Ultrafast Nanoscale Phase-Change Memory Enabled By Single-Pulse Conditioning.

We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via "initial crystallization" effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 10 cycles for similar "switching-on" voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.

Design of a Nanoscale, CMOS-Integrable, Thermal-Guiding Structure for Boolean-Logic and Neuromorphic Computation.

One of the requirements for achieving faster CMOS electronics is to mitigate the unacceptably large chip areas required to steer heat away from or, more recently, toward the critical nodes of state-of-the-art devices. Thermal-guiding (TG) structures can efficiently direct heat by "meta-materials" engineering; however, some key aspects of the behavior of these systems are not fully understood. Here, we demonstrate control of the thermal-diffusion properties of TG structures by using nanometer-scale, CMOS-integrable, graphene-on-silica stacked materials through finite-element-methods simulations.

Photonic jet with ultralong working distance by hemispheric shell.

Micro-particle assisted nano-imaging has proven its success in the past few years since it can magnify the nano-objects, especially the metallic objects, into an image then collected by a conventional microscope. Micro-shell, which is a novel design of micro-particle in the configuration of a hemisphere with a hollow core region, is proposed and optimized in this paper in order to obtain a long photonic jet far away from its flat surface, thus increasing its working distance. Its dependence on the configuration and refractive index is investigated numerically.

Ultrafast phase-change logic device driven by melting processes.

The ultrahigh demand for faster computers is currently tackled by traditional methods such as size scaling (for increasing the number of devices), but this is rapidly becoming almost impossible, due to physical and lithographic limitations. To boost the speed of computers without increasing the number of logic devices, one of the most feasible solutions is to increase the number of operations performed by a device, which is largely impossible to achieve using current silicon-based logic devices. Multiple operations in phase-change-based logic devices have been achieved using crystallization; however, they can achieve mostly speeds of several hundreds of nanoseconds.

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials.

The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition.

Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures.

Phase-change random access memory cells with superlattice-like (SLL) GeTe/Sb(2)Te(3) were demonstrated to have excellent scaling performance in terms of switching speed and operating voltage. In this study, the correlations between the cell size, switching speed and operating voltage of the SLL cells were identified and investigated. We found that small SLL cells can achieve faster switching speed and lower operating voltage compared to the large SLL cells.

Perspectives for 10 terabits/in2 magnetic recording.

Magnetic recording technology has come a long way, since the introduction of the first hard disk drives (HDD) in 1956. The areal density has grown by a factor of 200 million times and the HDD has stayed as a main candidate for mass storage of information. In order to maintain its lead over other competing technologies, HDD industry continues to invent several technologies.

Effect of short annealing times on the magnetoelectronic properties of Co/Pd-based pseudo-spin-valves.

We investigated the effects of short annealing times on the magnetoelectronic properties of pseudo-spin-valves (PSV) with perpendicular magnetic anisotropy based on Co/Pd multilayers using a contact hot plate. In order to study the time scale at which the degradation of film properties occurs for possible application in perpendicular MgO-based magnetic tunnel junctions (MTJ), the results were compared against our previous study of Co/Pd PSV based on vacuum annealing. With contact annealing for up to 90 s, no significant changes to the current-in-plane giant magnetoresistance (CIP-GMR), interlayer coupling, sheet resistance and layer coercivities were observed for up to 200 degrees C.

Magnetic properties and phase change features in Fe-doped Ge-Sb-Te.

The relationship between magnetic property and phase change features in Fe-doped Ge-Sb-Te has been studied. Fe-doped Ge-Sb-Te is a phase change magnetic material, which exhibits a fast phase change feature and different magnetic, optical and electrical properties between amorphous and crystalline states. However, the crystallization temperature increases and crystallization rate drops with an increase of Fe doping content.

The Fano resonance in plasmonic nanostructures and metamaterials.

Since its discovery, the asymmetric Fano resonance has been a characteristic feature of interacting quantum systems. The shape of this resonance is distinctively different from that of conventional symmetric resonance curves. Recently, the Fano resonance has been found in plasmonic nanoparticles, photonic crystals, and electromagnetic metamaterials.

Fast CGH computation using S-LUT on GPU.

In computation of full-parallax computer-generated hologram (CGH), balance between speed and memory usage is always the core of algorithm development. To solve the speed problem of coherent ray trace (CRT) algorithm and memory problem of look-up table (LUT) algorithm without sacrificing reconstructed object quality, we develop a novel algorithm with split look-up tables (S-LUT) and implement it on graphics processing unit (GPU). Our results show that S-LUT on GPU has the fastest speed among all the algorithms investigated in this paper, while it still maintaining low memory usage.

Deterministic beam fanning in Fe-doped stoichiometric lithium niobate crystals.

We investigated the beam-fanning effect in Fe-doped stoichiometric lithium niobate (Fe:SLN) crystals that were grown by the top-seeded solution growth method. Deterministic beam fanning (DBF) was measured in Z-cut Fe:SLN crystal for incident light propagating along the c+ and c- axes. The dependence of beam-fanning factors on incident power density was also studied.

One-wavelength tuning method for a tunable optical filter based on a cascaded polarization interference filter.

A one-wavelength tuning method is proposed to solve the tuning difficulty in a tunable optical filter based on cascaded cells. This method ensures that the optical path difference variation of all of the cells for the tuning is less than one wavelength and lowers the relative tuning accuracy requirement. Simulations show that different cells have different cross talk and loss deterioration when they undergo an error in optical path difference between the O-ray and the E-ray.

Multispeed rewritable optical-recording method with an initialization-free phase-change disk.

A new method of multispeed rewritable optical recording is presented. An initialization-free phase-change optical disk is proposed as a candidate for multispeed rewritable optical recording. The simulated results of the initialization-free disk at different linear velocities show that the cooling rate increases from approximately 18.