Drain-Source Voltage-Controllable Three-Switch Active-Clamp Forward Converter for Wide Input/Output Voltage Applications.

Active-clamp forward converters are applied to various medium-capacity power systems because they have a relatively simple structure and are capable of zero-voltage switching. In particular, there is the advantage that a stable output voltage can be obtained by controlling the duty ratio of the power semiconductor switch even in applications with wide input and output voltage ranges. However, the voltage stress on the power semiconductor switches due to the application of active clamp is higher than the input voltage, especially as the duty ratio increases.

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors.

The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The transfer characteristics, breakdown voltage, and energy loss of a double-pulse switching test circuit are analyzed.