Publications by authors named "Chong Bi"

The Geneva Sentimentality Scale (GSS) measures the experience of being moved and its effects on behavior. Despite the prevalence of this emotional response, it has not been extensively studied in China. This study aims to adapt and revise the GSS for Chinese college students to assess its cross-cultural consistency.

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Interleukin-6 (IL-6) is a cytokine that can bind to IL-6 receptor and induce pleiotropic effects. It serves as a critical biomarker, involved in inflammation amplification, tumor progression, and many other disease developments. Nanobodies, featuring small structure and high affinity, are a powerful and versatile tool in medical diagnostics and therapeutics.

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Spins confined to point defects in atomically thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single-photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulfur vacancies in molybdenum disulfide (MoS) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic mapping of defect wave functions reveals an interplay of local symmetry breaking by a charge-state-dependent Jahn-Teller lattice distortion that, when combined with strong (≃100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain.

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Article Synopsis
  • The research explores the concept of magnetic proximity, demonstrating that a ferromagnetic interaction can occur at the interface between non-magnetic materials, specifically between sputtered Pt and semiconducting FeGeTe, at room temperature.
  • This interaction challenges previous limitations where materials typically required higher temperatures for ferromagnetism, as both Pt and FeGeTe do not exhibit ferromagnetism at 300 K on their own.
  • The findings suggest significant potential for developing efficient spintronic devices, as the presence of Pt doubles the spin current at the FeGeTe/Pt interface, indicating a promising path for room-temperature magnetism using low-temperature materials.
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Large spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with ferromagnets are promising for next-generation magnetic memory and logic devices. SOTs generated from y spin originating from spin Hall and Edelstein effects can realize field-free magnetization switching only when the magnetization and spin are collinear. Here we circumvent the above limitation by utilizing unconventional spins generated in a MnPd thin film grown on an oxidized silicon substrate.

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A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This Letter reports a genuine THE in a TI/MI structure that has only one magnetic phase.

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Magnetic tunnel junctions (MTJs) capable of electrical read and write operations have emerged as a canonical building block for nonvolatile memory and logic. However, the cause of the widespread device properties found experimentally in various MTJ stacks, including tunneling magnetoresistance (TMR), perpendicular magnetic anisotropy (PMA), and voltage-controlled magnetic anisotropy (VCMA), remains elusive. Here, using high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy, we found that the MTJ crystallization quality, boron diffusion out of the CoFeB fixed layer, and minimal oxidation of the fixed layer correlate with the TMR.

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Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator BiSe and an insulating ferromagnet BaFeO.

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Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdO tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature.

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We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.

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Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in the formed conductive filament is still under debate due to the difficulty to directly characterize its physical and electrical properties.

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Multiple myeloma (MM) is an incurable plasma cell malignancy and is the second most common hematological cancer. It is characterized by complex, recurrent genetic and epigenetic abnormalities. Recent publications have linked miRNAs, a novel class of gene regulators to cancer including MM.

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Unlike previous studies that emphasize the important role of thermodynamics or surface energy on the structure stabilization of ZnS nanocrystals, we successfully controlled the crystalline structure of ZnS nanocrystals simply by tuning sulfur precursor addition rate under exactly the same other conditions. We observed the structure of as prepared ZnS nanocrystals was evolved from wurtzite into zinc blende with increasing the addition rate of sulfur precursor. The method may extend to engineer other nanomaterials with desired physicochemical properties by controlling crystalline structure.

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