Design and Measurement of Microelectromechanical Three-Axis Magnetic Field Sensors Based on the CMOS Technique.

The design, fabrication, and measurement of a microelectromechanical system (MEMS) three-axis magnetic field sensor (MFS) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The MFS is a magnetic transistor type. The performance of the MFS was analyzed employing the semiconductor simulation software, Sentaurus TCAD.

The Enzymatic Doped/Undoped Poly-Silicon Nanowire Sensor for Glucose Concentration Measurement.

In this work, enzymatic doped/undoped poly-silicon nanowire sensors with different lengths were fabricated using a top-down technique to measure glucose concentration. The sensitivity and resolution of these sensors correlate well with the dopant property and length of nanowire. Experimental results indicate that the resolution is proportional to the nanowire length and dopant concentration.

Thermoelectric Energy Micro Harvesters with Temperature Sensors Manufactured Utilizing the CMOS-MEMS Technique.

This study develops a TEMH (thermoelectric energy micro harvester) chip utilizing a commercial 0.18 μm CMOS (complementary metal oxide semiconductor) process. The chip contains a TEMH and temperature sensors.

Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology.

A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE that are respectively employed to detect in the x- and y-direction magnetic field (MF).

Design and fabrication of a downlight luminaire with a dual frusto-conical reflector.

A design method and corresponding fabrication procedures are proposed for a dual frusto-conical reflector of a downlight luminaire. The profile of the dual frusto-conical reflector consists of two flat-slant reflective surfaces with slightly different slopes. The optimum dual frusto-conical reflector can be obtained with the proposed design method.

Manufacturing and Testing of Radio Frequency MEMS Switches Using the Complementary Metal Oxide Semiconductor Process.

A radio frequency microelectromechanical system switch (MSS) manufactured by the complementary metal oxide semiconductor (CMOS) process is presented. The MSS is a capacitive shunt type. Structure for the MSS consists of coplanar waveguide (CPW) lines, a membrane, and springs.

Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process.

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET.

Low-Concentration Ammonia Gas Sensors Manufactured Using the CMOS-MEMS Technique.

This study describes the fabrication of an ammonia gas sensor (AGS) using a complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique. The structure of the AGS features interdigitated electrodes (IDEs) and a sensing material on a silicon substrate. The IDEs are the stacked aluminum layers that are made using the CMOS process.

Fabrication and Characterization of Flexible Thermoelectric Generators Using Micromachining and Electroplating Techniques.

This study involves the fabrication and measurement of a flexible thermoelectric generator (FTG) using micromachining and electroplating processes. The area of the FTG is 46 × 17 mm, and it is composed of 39 thermocouples in series. The thermoelectric materials that are used for the FTG are copper and nickel.

Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process.

Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis.

Tip Pressure on Semicircular Specimens in Tapping Mode Atomic Force Microscopy in Viscous Fluid Environments.

Tapping mode (TM) atomic force microscopy (AFM) in a liquid environment is widely used to measure the contours of biological specimens. The TM triggers the AFM probe approximately at the resonant frequencies and controls the tip such that it periodically touches the specimen along the scanning path. The AFM probe and its tip produce a hydrodynamic pressure on the probe itself and press the specimen.

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique.

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater.

Ethanol microsensors with a readout circuit manufactured using the CMOS-MEMS technique.

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro -mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method.

Sol-gel zinc oxide humidity sensors integrated with a ring oscillator circuit on-a-chip.

The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip.

An acetone microsensor with a ring oscillator circuit fabricated using the commercial 0.18 μm CMOS process.

This study investigates the fabrication and characterization of an acetone microsensor with a ring oscillator circuit using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The acetone microsensor contains a sensitive material, interdigitated electrodes and a polysilicon heater.

Modeling and manufacturing of a micromachined magnetic sensor using the CMOS process without any post-process.

The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without any post-process.

Titanium dioxide nanoparticle humidity microsensors integrated with circuitry on-a-chip.

A humidity microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm CMOS (complementary metal oxide semiconductor) process was presented. The integrated sensor chip consists of a humidity sensor and a readout circuit.

Manufacture of radio frequency micromachined switches with annealing.

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process.

Fabrication and characterization of CMOS-MEMS magnetic microsensors.

This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force.

Micro ethanol sensors with a heater fabricated using the commercial 0.18 μm CMOS process.

The study investigates the fabrication and characterization of an ethanol microsensor equipped with a heater. The ethanol sensor is manufactured using the commercial 0.18 µm complementary metal oxide semiconductor (CMOS) process.

A zirconium dioxide ammonia microsensor integrated with a readout circuit manufactured using the 0.18 μm CMOS process.

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit.

Energy harvesting thermoelectric generators manufactured using the complementary metal oxide semiconductor process.

This paper presents the fabrication and characterization of energy harvesting thermoelectric micro generators using the commercial complementary metal oxide semiconductor (CMOS) process. The micro generator consists of 33 thermocouples in series. Thermocouple materials are p-type and n-type polysilicon since they have a large Seebeck coefficient difference.

Enhancement of intrinsic emission from ultrathin ZnO films using Si nanopillar template.

Highly efficient room-temperature ultraviolet (UV) luminescence is obtained in heterostructures consisting of 10-nm-thick ultrathin ZnO films grown on Si nanopillars fabricated using self-assembled silver nanoislands as a natural metal nanomask during a subsequent dry etching process. Atomic layer deposition was applied for depositing the ZnO films on the Si nanopillars under an ambient temperature of 200°C. Based on measurements of photoluminescence (PL), an intensive UV emission corresponding to free-exciton recombination (approximately 3.

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip.

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes.