Low-temperature gas-barrier films by atomic layer deposition for encapsulating organic light-emitting diodes.

Dependences of gas-barrier performance on the deposition temperature of atomic-layer-deposited (ALD) AlO, HfO, and ZnO films were studied to establish low-temperature ALD processes for encapsulating organic light-emitting diodes (OLEDs). By identifying and controlling the key factors, i.e.