Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor.

The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization rate occurring at a drain side can be reduced, owing to a raised source/drain area that can disperse the drain electric field. In this study, we will discuss how the electric field at the drain side of an RSD device is reduced by a vertical lightly doped drain (LDD) scheme rather than a RSD structure.

150-200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers.

A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (R) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the R.

Resistance of outmost shell- and embedded-end contacts of single- and multi-bridged carbon nanotubes.

Single-bridged (SB) and multi-bridged (MB) carbon nanotubes (CNTs) were laterally grown between two electrodes capped on a thin nickel film, which functioned as catalysts. SB CNTs with outermost shell-end and embedded-end contacts on the electrodes showed varistor- or metal-like current-voltage (IV) characteristics. The devices were measured with fixed-amplitude AC superimposed on varying bias voltages.