Negative differential resistance behavior and memory effect in laterally bridged ZnO nanorods grown by hydrothermal method.

A novel memory device based on laterally bridged ZnO nanorods (NRs) in the opposite direction was fabricated by the hydrothermal growth method and characterized. The electrodes were defined by a simple photolithography method. This method has lower cost, simpler process, and higher reliability than the traditional focused ion beam lithography method.

Optical and structural properties of Ga-doped ZnO nanorods.

The high-density single crystalline Ga-doped ZnO nanorods were grown on a glass substrate using the hydrothermal method. The average length and diameter of the nanorods were approximately 2.36 microm and 90 nm, respectively.

Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate.

The authors report the fabrication and I-V characteristics of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate. From field-emission scanning electron microscopy and X-ray diffraction spectrum, ZnO nanorods had a (0002) crystal orientation and a wurtzite hexagonal structure. During the I-V and response measurement, the flexible substrates were measured with (i.