Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration.

InGaN/sapphire-based photovoltaic (PV) cells with blue-band GaN/InGaN multiple-quantum-well absorption layers grown on patterned sapphire substrates were characterized under high concentrations up to 150-sun AM1.5G testing conditions. When the concentration ratio increased from 1 to 150 suns, the open-circuit voltage of the PV cells increased from 2.

Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells.

In this article, the characteristics of GaN-based LEDs grown on Ar-implanted GaN templates to form inverted Al0.27Ga0.83N pyramidal shells beneath an active layer were investigated.

InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film.

In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO₂ mask layer was patterned on a heavily doped n-GaN template layer rather than on a sapphire substrate. As a result, the periphery of the LED included several OSFs around the regrown GaN mesa.