Study of the Characteristics of BaSrTiMnO-Film Resistance Random Access Memory Devices.

In this study, BaSrTiMnO ceramics were fabricated by a novel ball milling technique followed by spin-coating to produce thin-film resistive memories. Measurements were made using field emission scanning electron microscopes, atomic force microscopes, X-ray diffractometers, and precision power meters to observe, analyze, and calculate surface microstructures, roughness, crystalline phases, half-height widths, and memory characteristics. Firstly, the effect of different sintering methods with different substitution ratios of Mn for Ti was studied.

In Situ-Generated Formamidine as a Carbon/Nitrogen Source for Enaminone Formation: One-Pot Synthesis of Functionalized 4-Acyl-1,2,3-triazoles.

,-Dimethylformamide was reacted with hexamethyldisilazane to generate an ,-dimethylformimidamide intermediate; thereafter, a reaction with acetophenones/β-diketones was induced to form enaminones. The one-pot synthetic protocol described in this paper can be applied to synthesize 1,4-disubstituted 1,2,3-triazoles and 1,4,5-trisubstituted 1,2,3-triazoles, in which organic azides are used as substrates under optimized conditions. Furthermore, this protocol uses readily available materials, is nearly free of solvent, can be applied to gram-scale operations, and leads to the formation of structurally diverse products with favorable yields.

One-Step Synthesis of 3-(Fmoc-amino acid)-3,4-diaminobenzoic Acids.

A one-step method for synthesizing 3-(Fmoc-amino acid)-3,4-diaminobenzoic acids was used to prepare preloaded diaminobenzoate resin. The coupling of free diaminobenzoic acid and Fmoc-amino acids gave pure products in 40-94% yield without any purification step in addition to precipitation except for histidine. For the proline residue, crude products were collected and used for solid-phase peptide synthesis to give a moderate yield of a pentapeptide.

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO:SiO Thin Films on Resistive Random Access Memory Devices.

Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITO:SiO thin film resistive random access memory (RRAM) devices were observed and discussed. The ITO:SiO thin films were prepared using a co-sputtering deposition method on the TiN/Si substrate. For the RRAM device structure fabrication, an Al/ITO:SiO/TiN/Si structure was prepared by using aluminum for the top electrode and a TiN material for the bottom electrode.

Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.

In this study, the bipolar switching properties and electrical conduction behaviors of the ITO thin films RRAM devices were investigated. For the transparent RRAM devices structure, indium tin oxide thin films were deposited by using the RF magnetron sputtering method on the ITO/glass substrate. For the ITO/ITO/ITO/glass (MIM) structure, an indium tin oxide thin film top electrode was prepared to form the transparent RRAM devices.

Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (BaCa)(TiSn)O₃ Lead-Free Piezoceramic Sheets.

By the conventional solid state reaction method, a small amount of lithium fluoride (LiF) was used as the sintering promoter to improve the sintering and piezoelectric characteristics of (BaCa)(TiSn)O₃ (BCTS) lead-free piezoceramic sheets. Using X-ray diffraction (XRD) and a scanning electron microscope (SEM), the inferences of the crystalline and surface microstructures were obtained and analyzed. Then, the impedance analyzer and d-meter were used to measure the dielectric and piezoelectric characteristics.

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage () characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons' switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model.

Comparison of hemostatic activation created by right- and left-heart radiofrequency catheter ablation.

Background: Thromboembolic complications commonly occur in radiofrequency (RF) ablation procedures (0.6-1.3% of cases).