The growth of sulfur adlayers on Au(100).

We have studied the growth of S layers adsorbed on Au(100) with low-energy electron diffraction (LEED), X-ray photoemission spectra (XPS), and scanning tunneling microscope (STM). Three phases of S/Au(100)-(2 × 2), trimer, and c(2 × 4)-are identified; the latter two are not previously reported. A dose of S2 at 300 K transformed Au(100)-(5 × 20) initially into the (2 × 2) phase and formed the c(2 × 4) phase at a saturation coverage.

P-side-up thin-film AlGaInP-based light emitting diodes with direct ohmic contact of an ITO layer with a GaP window layer.

A twice wafer-transfer technique can be used to fabricate high-brightness p-side-up thin-film AlGaInP-based light-emitting diodes (LEDs) with an indium-tin oxide (ITO) transparent conductive layer directly deposited on a GaP window layer, without using postannealing. The ITO layer can be used to improve light extraction, which enhances light output power. The p-side-up thin-film AlGaInP LED with an ITO layer exhibited excellent performance stability (e.