Background: Unlike conventional photon radiotherapy, particle therapy has the advantage of dose distribution. Carbon-ion radiotherapy is also advantageous in terms of biological effectiveness and other radiobiological aspects. These benefits lead to a higher response probability for previously known radioresistant tumor types.
View Article and Find Full Text PDFA metal-insulator-semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an AlO/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition-grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an AlO/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison.
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