AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO as Passivation and Dielectric Layers.

This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO is used to form the dielectric and passivation layers. The TiO film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM).