Wide process temperature of atomic layer deposition for InOthin-film transistors using novel indium precursor (N,N'-di-tert butylacetimidamido)dimethyllindium.

This study introduces a novel heteroleptic indium complex, which incorporates an amidinate ligand, serving as a high-temperature atomic layer deposition (ALD) precursor. The most stable structure was determined using density functional theory and synthesized, demonstrating thermal stability up to 375 °C. We fabricated indium oxide thin-film transistors (InOTFTs) prepared with DBADMI precursor using ALD in wide range of window processing temperature of 200 °C, 300 °C, and 350 °C with an ozone (O) as the source.

Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In-Ga-Zn-O bilayer channel configuration.

Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of the promising three-dimensional devices demanding a higher integration density owing to their structural advantages such as small device footprints. However, the VTFTs have suffered from the back-channel effects induced by the pattering process of vertical sidewalls, which critically deteriorate the device reliability. Therefore, to reduce the detrimental back-channel effects has been one of the most urgent issues for enhancing the device performance of VTFTs.

Dual-Functional Self-Attachable and Stretchable Interface for Universal Three-Dimensional Modular Electronics.

Stretchable electronics have become essential for custom-built electronics, self-assembling robotics, and wearable devices. Although many stretchable electronics contain integrated systems, they still limit bulky connection systems. We introduce a new dual-functioned self-attachable and stretchable interface (SASI), allowing a direct and instant interconnection between rigid and soft electronics.

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability.

Transistors with inorganic semiconductors have superior performance and reliability compared to organic transistors. However, they are unfavorable for building stretchable electronic products due to their brittle nature. Because of this drawback, they have mostly been placed on non-stretchable parts to avoid mechanical strain, burdening the deformable interconnects, which link these rigid parts, with the strain of the entire system.

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths.

Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry analysis that the excess oxygens increased with increasing the In contents within the IGZO channels. While the device using the IGZO channel with an In/Ga ratio of 0.

Wide angle holographic video projection display.

Holographic projection displays provide high diffraction efficiency. However, they have a limited projection angle. This work proposes a holographic projection display with a wide angle, which gives an image of size 306×161 at 700 mm and reduced speckle noise.

Solvent-assisted strongly enhanced light-emitting electrochemiluminescent devices for lighting applications.

Rubrene-based electrochemiluminescence (r-ECL) cells with two different solvent systems is prepared, one in a co-solvent system with a mixture of 1,2-dichlorobenzene and propylene carbonate (DCB : PC, v/v 3 : 1) and another in a single solvent system of tetrahydrofuran (THF), as the medium to form a liquid-electrolyte (L-El). By simply changing the solvent systems, from the co-solvent DCB : PC (v/v 3 : 1) to the single solvent THF, with the same amount of electrochemiluminescent rubrene (5 mM) and Li-based salt, a dramatically enhanced brightness of over 30 cd m is observed for the r-ECL cell in L-El which is approximately 7-times higher than the brightness of 5 cd m observed for the r-ECL in L-El.

Thin-film transistor-driven vertically stacked full-color organic light-emitting diodes for high-resolution active-matrix displays.

Thin-film transistor (TFT)-driven full-color organic light-emitting diodes (OLEDs) with vertically stacked structures are developed herein using photolithography processes, which allow for high-resolution displays of over 2,000 pixels per inch. Vertical stacking of OLEDs by the photolithography process is technically challenging, as OLEDs are vulnerable to moisture, oxygen, solutions for photolithography processes, and temperatures over 100 °C. In this study, we develop a low-temperature processed AlO/SiN bilayered protection layer, which stably protects the OLEDs from photolithography process solutions, as well as from moisture and oxygen.

Ultraflexible and transparent electroluminescent skin for real-time and super-resolution imaging of pressure distribution.

The ability to image pressure distribution over complex three-dimensional surfaces would significantly augment the potential applications of electronic skin. However, existing methods show poor spatial and temporal fidelity due to their limited pixel density, low sensitivity, or low conformability. Here, we report an ultraflexible and transparent electroluminescent skin that autonomously displays super-resolution images of pressure distribution in real time.

Crafting a 1.5 µm pixel pitch spatial light modulator using GeSbTe phase change material [Invited].

For this research, we have developed key technologies for a 1.5 µm pixel pitch spatial light modulator (SLM) using (GST) phase change material. To uniformly modulate each pixel, we designed a lateral pixel structure in which a heating current flows through a bottom indium tin oxide layer.

Correction: Rewritable full-color computer-generated holograms based on color-selective diffractive optical components including phase-change materials.

Correction for 'Rewritable full-color computer-generated holograms based on color-selective diffractive optical components including phase-change materials' by Chi-Young Hwang et al., Nanoscale, 2018, DOI: 10.1039/c8nr04471f.

Rewritable full-color computer-generated holograms based on color-selective diffractive optical components including phase-change materials.

We propose rewritable full-color computer-generated holograms (CGHs) based on color-selective diffraction using the diffractive optical component with the resonant characteristic. The structure includes an ultrathin layer of phase-change material Ge2Sb2Te5 (GST) on which a spatial binary pattern of amorphous and crystalline states can be recorded. The CGH patterns can be easily erased and rewritten by the pulsed ultraviolet laser writing technique owing to the thermally reconfigurable characteristic of GST.

Nitrogen Doping Effect for Improving Operation Reliability of Phase Modulator Using Ge₂Sb₂Te Thin Film for Hologram Image Implementation.

A phase modulation device was proposed for the implementation of hologram image for display applications. A Ge2Sb2Te5 (GST) film as thin as 7 nm was prepared between the ITO films to form the cavities corresponding a unit pixel. Nitrogen was incorporated into the GST for improving the thermal stability of the GST active region.

Graphene Electrode Enabling Electrochromic Approaches for Daylight-Dimming Applications.

For environmental reason, buildings increasingly install smart windows, which can dim incoming daylight based on active electrochromic devices (ECDs). In this work, multi-layered graphene (MLG) was investigated as an ECD window electrode, to minimize carbon dioxide (CO) emissions by decreasing the electricity consumption for building space cooling and heating and as an alternative to the transparent conductor tin-doped indium oxide (ITO) in order to decrease dependence on it. Various MLG electrodes with different numbers of graphene layers were prepared with environmentally friendly poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) to produce ECD cells.

Transparent Fingerprint Sensor System for Large Flat Panel Display.

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm.

Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn-In-O Thin-Film Transistors.

Active matrix organic light-emitting diodes (AMOLEDs) are considered to be a core component of next-generation display technology, which can be used for wearable and flexible devices. Reliable thin-film transistors (TFTs) with high mobility are required to drive AMOLEDs. Recently, amorphous oxide TFTs, due to their high mobility, have been considered as excellent substitutes for driving AMOLEDs.

Holographic image generation with a thin-film resonance caused by chalcogenide phase-change material.

The development of digital holography is anticipated for the viewing of 3D images by reconstructing both the amplitude and phase information of the object. Compared to analog holograms written by a laser interference, digital hologram technology has the potential to realize a moving 3D image using a spatial light modulator. However, to ensure a high-resolution 3D image with a large viewing angle, the hologram panel requires a near-wavelength scale pixel pitch with a sufficient large numbers of pixels.

Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes.

Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device.

Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C.

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers.

Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V(TH) shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive x-ray spectroscopy observations.

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.

Effect of the electrode materials on the drain-bias stress instabilities of In-Ga-Zn-O thin-film transistors.

The effects of electrode materials on the device stabilities of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) were investigated under gate- and/or drain-bias stress conditions. The fabricated IGZO TFTs with a top-gate bottom-contact structure exhibited very similar transfer characteristics between the devices using indium-tin oxide (ITO) and titanium electrodes. Typical values of the mobility and threshold voltage of each device were obtained as 13.

Current stress induced electrical instability in transparent zinc tin oxide thin-film transistors.

Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn:Sn = 4:1-2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f-noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn:Sn = 4:1] can be enhanced by a short-range ordering in amorphous Zn-Sn-oxide, causing a larger shift of the threshold voltage (deltaV(th)).

Structural and optical properties of Cu doped ZnO thin films by co-sputtering.

This paper reports on the structural and optical properties of ZnCuO thin films that were prepared by co-sputtering for the application of p-type-channel transparent thin-film transistors (TFTs). Pure ceramic ZnO and metal Cu targets were prepared for the co-sputtering of the ZnCuO thin films. The effects of the Cu concentration on the structural, optical, and electrical properties of the ZnCuO films were investigated after their heat treatment.