Organometal halide perovskite (CHNHPbI) semiconductors have been promising candidates as a photoactive layer for photovoltaics. Especially for high performance devices, the crystal structure and morphology of this perovskite layer should be optimized. In this experiment, by employing solvent-antisolvent vapor techniques during a modified sequential deposition of PbI-CHNHI layers, the morphology engineering was carried out as a function of antisolvent species such as: chloroform, chlorobenzene, dichlorobenzene, toluene, and diethyl ether.
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