Analysis of coupling effect between TID and SET in SOI Tri-Gate nanowire field-effect transistors.

This study investigates the response of nanowire field-effect transistors (NWFETs) to total ionizing dose (TID), single-event transient (SET), and their coupling effects in junctionless (JL), inversion (IM), and junctionless accumulation (AC) modes. The degradation of the three modes under irradiation and the effect of device bias configuration on the electrical properties of NWFETs are analyzed, and the different effects of SET on the three modes are compared. On this basis, the influence of TID on SET current generation and the charge collection mechanism are studied, and the changes in peak current, pulse width, and collected charge of transient current under different TIDs are compared.

Highly sensitive "off-on" sensor based on MXene and magnetic microspheres for simultaneous detection of lung cancer biomarkers - Neuron specific enolase and carcinoembryonic antigen.

In this work, a highly sensitive lung cancer biomarkers detection probe was developed based on Ag and MXene co-functionalized magnetic microspheres. By using carboxyl magnetic microspheres as carrier, MXene was coated repeatedly by Poly (allylamine hydrochloride) (PAH) as interlayer adhesive, and silver particles grown on the surface of MXene in situ can efficiently improve the sensitivity of the probe. The detection of neuron specific enolase (NSE) is mainly through the formation of a specific complex between NSE antigen and antibody, and the release of antibody labeled with amino carbon quantum dots (CQDs) from the surface of Ag nanoparticles (AgNPs), so that the fluorescence is restored and "OFF-ON" is formed.

SEU Hardened D Flip-Flop Design with Low Area Overhead.

D flip-flop (DFF) is the basic unit of sequential logic in digital circuits. However, because of an internal cross-coupled inverter pair, it can easily appear as a single event upset (SEU) when hit by high-energy particles, resulting in the error in the value stored in the flip-flop. On this basis, a new structure D flip-flop is proposed in this paper.

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.

In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that, under the combined influence of these two effects, the circuit's upset threshold and critical charge decreased by 15.4% and 23.

Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit.

The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on-off function of devices. At present, most of the irradiation research on the circuit level is focused on the single event effect, and there is very little research on the total ionizing dose effect. Therefore, this study mainly analyzes the influence of TID effects on a CMOS inverter circuit based on 22 nm FDSOI transistors.

High-Performance and Flexible Design Scheme with ECC Protection in the Cache.

To improve the reliability of static random access memory (SRAM), error-correcting codes (ECC) are typically used to protect SRAM in the cache. While improving the reliability, we also need additional circuits to support ECC, including encoding and decoding logic. In a high-speed circuit such as a CPU, the L1 cache maintains the same frequency as the CPU, and the decoding of the ECC codes in the cache consumes considerable combinational logic, resulting in limited frequency and performance.

A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.

A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper. InGaAs/GaAsSb heterojunction is applied in HJ-LTFET to enhance the ON-state current (I). Owing to the quasi-broken gap energy band alignment of InGaAs/GaAsSb heterojunction, height and thickness of tunneling barrier are greatly reduced.

Polarization Gradient Effect of Negative Capacitance LTFET.

In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.

Ultrasensitive Detection of Pb Based on a DNAzyme and Digital PCR.

In this study, an ultrasensitive detection method for aqueous Pb based on digital polymerase chain reaction (dPCR) technology and a Pb-dependent DNAzyme was developed. In the presence of Pb, the Gr-5 DNAzyme was activated and catalyzed the hydrolytic cleavage of the substrate strand, resulting in an increase in the amount of template DNA available for dPCR and a resultant change in the number of droplets showing a positive signal. Moreover, the detection system was found to be sensitive and stable in environmental sample detection.

Effects of Target Temperature Management on the Outcome of Septic Patients with Fever.

Objectives: To investigate the effects of target temperature management on hemodynamic changes, inflammatory and immune factors, and clinical outcomes of sepsis patients with fever.

Methods: Patients diagnosed with sepsis with a core temperature of ≥39°C were randomly divided into two groups: a low-temperature group (LT group: 36.5°C-38°C) and a high-temperature group (HT group: 38.

Potentially functional polymorphism in IL-23 receptor and risk of acute myeloid leukemia in a Chinese population.

The interleukin-23 (IL-23) and its receptor (IL-23R) mediate the direct antitumor activities in human hematologic malignancies including pediatric acute leukemia. Two potentially functional genetic variants (IL-23R rs1884444 T>G and rs6682925 T>C) have been found to contribute to solid cancer susceptibility. In this study, we conducted a case-control study including 545 acute myeloid leukemia (AML) patients and 1,146 cancer-free controls in a Chinese population to assess the association between these two SNPs and the risk of AML.

[Research advances on correlation of ARID5B gene with childhood acute lymphoblastic leukemia - review].

Childhood acute lymphoblastic leukemia (C-ALL) is the most common pediatric cancer. Although its etiology remains poorly understood, the hypothesis of ALL correlated with a genetic basis was examined through association studies based on candidate genes. Recently, two independent large-scale genome-wide association studies reported that the five single nucleotide polymorphisms (rs7073837; rs10821936; rs10994982; rs7089424; rs10740055) in the gene AT rich interactive domain 5B (ARID5B) at 10q21.