High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites.

Making field emitters with both low turn-on field () and high current emission stability is one of the keys to push forward their practical applications. In the present work, we report the exploration of high-performance field emitters with designed sharp corners around SiC nanowires for fundamentally enhanced electron emission sites. The sharp corners with tailored densities are rationally created based on a facile etching technique.