Publications by authors named "Chenping Wu"

Hexagonal boron nitride (h-BN) is the widest band gap 2D material (>6 eV), which has attracted extensive attention. For exploring potential applications in optoelectronic devices, electrical conductivity modulation (n or p type) is of extreme importance. Here, we report the achievement of a large-scale and high quality h-BN monolayer with p-type conductivity by modulation doping of Mg using a low pressure chemical vapor deposition method.

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Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap (~6 eV). However, the growth size of h-BN film is strongly limited by the size of reaction chamber. Here, we demonstrate the large-roll synthesis of monolayer and controllable sub-monolayer h-BN film on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method.

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We demonstrate a one-pot, low-cost, and scalable method for fast synthesis of superfine and uniform core-shell Cu nanowires (NWs) coated with optional metals and/or alloy. Cu NWs in high aspect ratio (>3000) were synthesized through an oleylamine-mediated solution method, and tunable shell coating was performed by injecting metal-organic precursors at the last stage of reaction. Superfine Cu@metal NWs (Ti, Zn, V, Ni, Ag, NiZn, etc) were achieved in diameter of ∼30 nm and length of ∼50 μm.

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Transparent conducting film occupies an important position in various optoelectronic devices. To replace the costly tin-doped indium oxide (ITO), promising materials, such as metal nanowires and graphene, have been widely studied. Moreover, a long-pursued goal is to consolidate these two materials together and express their outstanding properties simultaneously.

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