Publications by authors named "Chenguang Fu"

Transient Raman thermometry improves on its steady-state counterpart by eliminating the error-prone steps of temperature calibration and laser absorption measurement. However, the accompanying complex heat transfer process often requires numerical analysis, such as the finite element method, to decipher the measured data. This step can be time-consuming, inconvenient, and difficult to derive a physical understanding of the heat transfer process involved.

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Low-cost thermoelectric materials with simultaneous high performance and superior plasticity at room temperature are urgently demanded due to the lack of ever-lasting power supply for flexible electronics. However, the inherent brittleness in conventional thermoelectric semiconductors and the inferior thermoelectric performance in plastic organics/inorganics severely limit such applications. Here, we report low-cost inorganic polycrystalline MgSbBiTe, which demonstrates a remarkable combination of large strain (~ 43%) and high figure of merit zT (~ 0.

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The rapid development of the Internet of Things has triggered a huge demand for self-sustained technology that can provide a continuous electricity supply for low-power electronics. Here, a self-sustained power supply solution is demonstrated that can produce a 24 h continuous and unipolar electricity output based on thermoelectric devices by harvesting the environmental temperature difference, which is ingeniously established utilizing radiation cooling and selective photothermal conversion. The developed prototype system can stably maintain a large temperature difference of about 1.

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Vacuolar sugar transporters transport sugar across the tonoplast, are major players in maintaining sugar homeostasis, and therefore play vital roles in plant growth, development, and biomass yield. In this study, we analyzed the physiological roles of the tonoplast monosaccharide transporter 2 (TMT2) in Arabidopsis. In contrast to the wild type (WT) that produced uniform seedlings, the mutant produced three types of offspring: un-germinated seeds (UnG), seedlings that cannot form true leaves (), and seedlings that develop normally ().

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Half-Heusler compounds with semiconducting behavior have been developed as high-performance thermoelectric materials for power generation. Many half-Heusler compounds also exhibit metallic behavior without a bandgap and thus inferior thermoelectric performance. Here, taking metallic half-Heusler MgNiSb as an example, a bandgap opening strategy is proposed by introducing the d-d orbital interactions, which enables the opening of the bandgap and the improvement of the thermoelectric performance.

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The recently developed defective 19-electron half-Heusler (HH) compounds, represented by Nb CoSb, possess massive intrinsic vacancies at the cation site and thus intrinsically low lattice thermal conductivity that is desirable for thermoelectric (TE) applications. Yet the TE performance of defective HHs with a maximum figure of merit (zT) <1.0 is still inferior to that of the conventional 18-electron ones.

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Wearable thermoelectric generators (TEGs), which can convert human body heat to electricity, provide a promising solution for self-powered wearable electronics. However, their power densities still need to be improved aiming at broad practical applications. Here, a stretchable TEG that achieves comfortable wearability and outstanding output performance simultaneously is reported.

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Inorganic semiconductor AgTe S has been recently found to exhibit unexpected plastic deformation with compressive strain up to 30%. However, the origin of the abnormal plasticity and how to simultaneously achieve superb ductility and high mobility are still elusive. Here, we demonstrate that crystalline/amorphous AgTe S ( = 0.

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Band structure engineering has a strong beneficial impact on thermoelectric performance, where theoretical methods dominate the investigation of electronic structures. Here, we use angle-resolved photoemission spectroscopy (ARPES) to analyze the electronic structure and report on the thermoelectric transport properties of half-Heusler TiCoSb high-quality single crystals. High degeneracy of the valence bands at the L and Γ band maximum points was observed, which provides a band-convergence scenario for the thermoelectric performance of TiCoSb.

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Wearable thermoelectrics has attracted significant interest in recent years. Among them, rigid-structure thermoelectric generators (TEGs) were seldomly employed for wearable applications, although those exhibit significant advantages of high device output performance and impact resistance. Here, we report a type of rigid wearable TEGs (w-TEGs) without ceramic substrates made using a simple cutting-and-bonding method.

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Artificial intelligence (AI) coupled with promising machine learning (ML) techniques well known from computer science is broadly affecting many aspects of various fields including science and technology, industry, and even our day-to-day life. The ML techniques have been developed to analyze high-throughput data with a view to obtaining useful insights, categorizing, predicting, and making evidence-based decisions in novel ways, which will promote the growth of novel applications and fuel the sustainable booming of AI. This paper undertakes a comprehensive survey on the development and application of AI in different aspects of fundamental sciences, including information science, mathematics, medical science, materials science, geoscience, life science, physics, and chemistry.

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Valley anisotropy is a favorable electronic structure feature that could be utilized for good thermoelectric performance. Here, taking advantage of the single anisotropic Fermi pocket in p-type MgSb, a feasible strategy utilizing the valley anisotropy to enhance the thermoelectric power factor is demonstrated by synergistic studies on both single crystals and textured polycrystalline samples. Compared to the heavy-band direction, a higher carrier mobility by a factor of 3 is observed along the light-band direction, while the Seebeck coefficient remains similar.

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The interplay between topology and magnetism has recently sparked the frontier studies of magnetic topological materials that exhibit intriguing anomalous Hall and Nernst effects owning to the large intrinsic Berry curvature (BC). To better understand the anomalous quantum transport properties of these materials and their implications for future applications such as electronic and thermoelectric devices, it is crucial to discover more novel material platforms for performing anomalous transverse transport studies. Here, it is experimentally demonstrated that low-cost Fe-based Heusler compounds exhibit large anomalous Hall and Nernst effects.

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Most crystalline materials follow the guidelines of temperature-dependent lattice thermal conductivity ( ) at elevated temperatures. Here, we observe a weak temperature dependence of in MgSb, from theory and from measurements, based on a comprehensive study combining molecular dynamics calculations and experimental measurements on single crystal MgSb. These results can be understood in terms of the so-called "phonon renormalization" effects due to the strong temperature dependence of the interatomic force constants (IFCs).

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Since the first successful implementation of -type doping, low-cost MgSb Bi alloys have been rapidly developed as excellent thermoelectric materials in recent years. An average figure of merit above unity over the temperature range 300-700 K makes this new system become a promising alternative to the commercially used -type BiTe Se alloys for either refrigeration or low-grade heat power generation near room temperature. In this review, with the structure-property-application relationship as the mainline, we first discuss how the crystallographic, electronic, and phononic structures lay the foundation of the high thermoelectric performance.

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In recent years, high-performance half-Heusler compounds have been developed as promising thermoelectric materials for power generation. Aiming at practical device applications, one key step is to seek suitable metal electrodes so that low interfacial resistivity is guaranteed under long-term thermal aging. In the previous work, the fresh Mo/NbTiFeSb junction was found exhibiting low contact resistivity below 1 μΩ cm; however, it increased by tens of times under long-term thermal aging, mainly originating from the formation of the high-resistivity FeSb phase and the appearance of cracks.

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Heusler compounds have potential in electrocatalysis because of their mechanical robustness, metallic conductivity, and wide tunability in the electronic structure and element compositions. This study reports the first application of Co YZ-type Heusler compounds as electrocatalysts for the oxygen evolution reaction (OER). A range of Co YZ crystals was synthesized through the arc-melting method and the e orbital filling of Co was precisely regulated by varying Y and Z sites of the compound.

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The emerging class of topological materials provides a platform to engineer exotic electronic structures for a variety of applications. As complex band structures and Fermi surfaces can directly benefit thermoelectric performance it is important to identify the role of featured topological bands in thermoelectrics particularly when there are coexisting classic regular bands. In this work, the contribution of Dirac bands to thermoelectric performance and their ability to concurrently achieve large thermopower and low resistivity in novel semimetals is investigated.

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The development of high-density magnetic recording media is limited by superparamagnetism in very small ferromagnetic crystals. Hard magnetic materials with strong perpendicular anisotropy offer stability and high recording density. To overcome the difficulty of writing media with a large coercivity, heat-assisted magnetic recording was developed, rapidly heating the media to the Curie temperature T before writing, followed by rapid cooling.

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Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical doping plays multiple roles for both electron and phonon transport properties in half-Heusler thermoelectric materials.

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Highly conductive topological semimetals with exotic electronic structures offer fertile ground for the investigation of the electrical and thermal transport behavior of quasiparticles. Here, we find that the layer-structured Dirac semimetal PtSn exhibits a largely suppressed thermal conductivity under a magnetic field. At low temperatures, a dramatic decrease in the thermal conductivity of PtSn by more than two orders of magnitude is obtained at 9 T.

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Mg (Sb,Bi) alloys have recently been discovered as a competitive alternative to the state-of-the-art n-type Bi (Te,Se) thermoelectric alloys. Previous theoretical studies predict that single crystals Mg (Sb,Bi) can exhibit higher thermoelectric performance near room temperature by eliminating grain boundary resistance. However, the intrinsic Mg defect chemistry makes it challenging to grow n-type Mg (Sb,Bi) single crystals.

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Accurate determination of the intrinsic electronic structure of thermoelectric materials is a prerequisite for utilizing an electronic band engineering strategy to improve their thermoelectric performance. Herein, with high-resolution angle-resolved photoemission spectroscopy (ARPES), the intrinsic electronic structure of the 3D half-Heusler thermoelectric material ZrNiSn is revealed. An unexpectedly large intrinsic bandgap is directly observed by ARPES and is further confirmed by electrical and optical measurements and first-principles calculations.

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The observation of extraordinarily high conductivity in delafossite-type PdCoO is of great current interest, and there is some evidence that electrons behave like a fluid when flowing in bulk crystals of PdCoO. Thus, this material is an ideal platform for the study of the electron transfer processes in heterogeneous reactions. Here, we report the use of bulk single-crystal PdCoO as a promising electrocatalyst for hydrogen evolution reactions (HERs).

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The band inversion in topological phase matters bring exotic physical properties such as the topologically protected surface states (TSS). They strongly influence the surface electronic structures of the materials and could serve as a good platform to gain insight into the surface reactions. Here we synthesized high-quality bulk single crystals of CoSnS that naturally hosts the band structure of a topological semimetal.

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