Publications by authors named "Chengkuan Wang"
Article Synopsis
- Schottky diodes are crucial for high-frequency communication systems, but there's a performance gap between thin-film and bulk semiconductor diodes.
- Researchers explored indium-tin-oxide (ITO) to improve thin-film diodes, discovering a way to convert ITO from a metal-like to semiconductor-like material through quantum confinement.
- This innovation led to the development of an ITO Schottky diode with a terahertz cutoff frequency, potentially advancing technology for future 5G and 6G networks.
We demonstrate GeSn p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width () on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, GeSn p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (/) ratio of ∼1.2 × 10, and a high-field effective hole mobility () of ∼115 cm/(V s).
View Article and Find Full Text PDF