Defect-Engineered Dzyaloshinskii-Moriya Interaction and Electric-Field-Switchable Topological Spin Texture in SrRuO.

In situ electrical control of the Dzyaloshinskii-Moriya interaction (DMI) is one of the central but challenging goals toward skyrmion-based device applications. An atomic design of defective interfaces in spin-orbit-coupled transition-metal oxides can be an appealing strategy to achieve this goal. In this work, by utilizing the distinct formation energies and diffusion barriers of oxygen vacancies at SrRuO /SrTiO (001), a sharp interface is constructed between oxygen-deficient and stoichiometric SrRuO .

Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer LaSrMnO Thin Film.

Magnetic field-free, nonvolatile magnetic memory with low power consumption is highly desired in information technology. In this work, we report a current-controllable alignment of magnetic domain walls in a single layer LaSrMnO thin film with the threshold current density of 2 × 10 A/cm at room temperature. The vector relationship between current directions and domain-wall orientations indicates the dominant role of spin-orbit torque without an assistance of external magnetic field.

Atomically Resolved Edge States on a Layered Ferroelectric Oxide.

The emerging surface/edge electronic phases driven by broken symmetry effects have attracted great attention in low-dimensional electronic systems. However, experimental proof on their existence in ferroelectric oxides at the atomic scale is still missing. In this work, metallic surface states are observed on layered BiWO by scanning tunneling microscopy/spectroscopy.