Guang Pu Xue Yu Guang Pu Fen Xi
January 2012
In the present paper, optical characteristics of InGaN/GaN multiple quantum wells light emitting diodes fabricated on the conventional (C-LEDs) and patterned sapphire substrates (PSSLEDs) were investigated by electroluminescence (EL) and photoluminescence (PL). PSSLEDs show higher light output power and smaller full width at half maximum (FWHM) of EL than those of C-LEDs for their better crystalline quality. The FWHM of EL for PSSLEDs exhibits faster broadening as current increases than C-LEDs, while the same broadening of FWHM of PL as excitation power increases is shown in PSSLEDs and C-LEDs, which indicate that there is stronger band filling effect in PSSLEDs caused by relatively higher carrier density in their QWs at the same current injection level.
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