Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal CdAsgrown on Si.

Preparing CdAs, which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding CdAsfilms grown on Si showing the chiral anomaly. Here,, we report the novel preparation and fabrication technique of a CdAs(112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry's phase of.

Low-Voltage and Low-Power True-Single-Phase 16-Transistor Flip-Flop Design.

A low-voltage and low-power true single-phase flip-flop that minimum the total transistor count by using the pass transistor logic circuit scheme is proposed in this paper. Optimization measures lead to a new flip-flop design with better various performances such as speed, power, energy, and layout area. Based on post-layout simulation results using the TSMC CMOS 180 nm and 90 nm technologies, the proposed design achieves the conventional transmission-gate-based flip-flop design with a 53.

Magnetotransport in hybrid InSe/monolayer graphene on SiC.

The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron-electron (e-e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope R  = δR /δB = δρ /δB can be used to probe e-e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron-phonon scattering.

Coulomb decay rates in monolayer doped graphene.

Excited conduction electrons, conduction holes, and valence holes in monolayer electron-doped graphene exhibit unusual Coulomb decay rates. The deexcitation processes are studied using the screened exchange energy. They might utilize the intraband and interband single-particle excitations, as well as the plasmon modes, depending on the quasiparticle states and the Fermi energies.