In this study, we demonstrated that the improvement of detection capability of cadmium sulfide (CdS) photoconductors in the ultraviolet (UV) regime is much larger than that in the visible regime, suggesting that the deep UV laser-treated CdS devices are very suitable for low-light detection in the UV regime. We determined that a nanocrystallized CdS photoconductor can behave as a picowatt-sensitive detector in the UV regime after ultra-shallow-region crystallization of the CdS film upon a single shot from a KrF laser. Photoluminescence and Raman spectra revealed that laser treatment increased the degree of crystallization of the CdS and led to the effective removal of defects in the region of a few tens nanometers beneath the surface of CdS, confirming the result by the transmission electron microscopy (TEM) images.
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