Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium Oxide Devices.

In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.

Forming-Free SiGeO/TiO Resistive Random Access Memories Featuring Large Current Distribution Windows.

Optimal device integrity was achieved in Ni/SiGeO/TiO/TaN resistive memory by using a forming-free switch with a low switching power of 790 W, stable endurance of 104 cycles, optimal retention time of 105 s, resistance window of at least 1150×, and tight current distributions at 85 °C. These characteristics are attributed to the low current switching obtained using SiGeO with a high oxygen vacancy density and highly defective TiO grain boundaries.

TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density.

We report a low-temperature InP p-MOS with a high capacitance density of 2.7 µF/cm2, low leakage current of 0.77 A/cm2 at 1 V and tight current distribution.

[Change in Toll-like receptor 4 expression on interstitial macrophages in acute lung injury].

Objective: To observe changes in the level of Toll-like receptor 4 (TLR4) mRNA and the expression of TLR4 protein in interstitial macrophages in serious thoracic injury.

Methods: A rat model of severe thoracic trauma was reproduced,then interstitial macrophages were isolated and collected by enzymatic digestion before and after trauma cultured. TLR4 mRNA and the expression of TLR4 protein were measured by Northern and Western blotting before trauma and 2, 4, 8, 16, 24 hours after trauma.