36 GHz submicron silicon waveguide germanium photodetector.

We present two effective approaches to improve the responsivity of high speed waveguide-based Ge photodetectors integrated on a 0.25 μm silicon-on-insulator (SOI) platform. The main cause of poor responsivity is identified as metal absorption from the top contact to Ge.

Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator.

We present the design and fabrication of a waveguide-based Ge electro-absorption (EA) modulator integrated with a 3 µm silicon-on-isolator (SOI) waveguide. The proposed Ge EA modulator employs a butt-coupled horizontally-oriented p-i-n structure. The optical design achieves a low-loss transition from Ge to Si waveguides.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.

Compact single-chip VMUX/DEMUX on the silicon-on-insulator platform.

We demonstrate a compact, single-chip 40-channel, dense wavelength division multiplexing (DWDM) variable attenuator multi/demultiplexer (VMUX/DEMUX) by monolithic integration of an echelle grating and high-speed p-i-n VOA on the silicon-on-insulator (SOI) platform. The demonstrated device has a flat-top filter shape, on chip loss of 5.0 dB, low PDL of 0.

Low loss shallow-ridge silicon waveguides.

We demonstrate low loss shallow-ridge silicon waveguides with an average propagation loss of 0.274 + or - 0.008 dB/cm in the C-band (1530 nm - 1565 nm).

Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator.

We present a high-speed silicon optical modulator with a low V(pp) (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure. With a V(pp) of 2 V, we demonstrate a silicon modulator with a 3 dB bandwidth of 11 GHz, a modulation depth of 6.5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of approximately 1000 microm(2).

Optical proximity communication using reflective mirrors.

Optical proximity communication (OPxC) with reflecting mirrors is presented. Direct optical links are demonstrated for silicon chips with better than -2.5dB coupling loss, excluding surface losses.