Low-thermal-budget electrically active thick polysilicon for CMOS-First MEMS-last integration.

Low-thermal-budget, electrically active, and thick polysilicon films are necessary for building a microelectromechanical system (MEMS) on top of a complementary metal oxide semiconductor (CMOS). However, the formation of these polysilicon films is a challenge in this field. Herein, for the first time, the development of in situ phosphorus-doped silicon films deposited under ultrahigh-vacuum conditions (~10 Torr) using electron-beam evaporation (UHVEE) is reported.