Field emission and strain engineering of electronic properties in boron nitride nanotubes.

The electrical properties of boron nitride (BN) nanostructures, particularly BN nanotubes (NTs), have been studied less in comparison to the counterpart carbon nanotubes. The present work investigates the field emission (FE) behavior of BNNTs under multiple cycles of FE experiments and demonstrates a strain-engineering pathway to tune the electronic properties of BNNTs. The electrical probing of individual BNNTs were conducted inside a transmission electron microscope (TEM) using an in situ electrical holder capable of applying a bias voltage of up to 110 V.