New Scheme of MEMS-Based LiDAR by Synchronized Dual-Laser Beams for Detection Range Enhancement.

A new scheme presents MEMS-based LiDAR with synchronized dual-laser beams for detection range enhancement and precise point-cloud data without using higher laser power. The novel MEMS-based LiDAR module uses the principal laser light to build point-cloud data. In addition, an auxiliary laser light amplifies the single-noise ratio to enhance the detection range.

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence.

Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N content of 0.08%, these defects are found to promote non-radiative (NR) recombination, which causes spatial variation of the CL peak position and its intensity.

GaP/GaNP Heterojunctions for Efficient Solar-Driven Water Oxidation.

The growth and characterization of an n-GaP/i-GaNP/p -GaP thin film heterojunction synthesized using a gas-source molecular beam epitaxy (MBE) method, and its application for efficient solar-driven water oxidation is reported. The TiO /Ni passivated n-GaP/i-GaNP/p -GaP thin film heterojunction provides much higher photoanodic performance in 1 m KOH solution than the TiO /Ni-coated n-GaP substrate, leading to much lower onset potential and much higher photocurrent. There is a significant photoanodic potential shift of 764 mV at a photocurrent of 0.

Zinc Oxide Nanorods Shielded with an Ultrathin Nickel Layer: Tailoring of Physical Properties.

We report on the development of Ni-shielded ZnO nanorod (NR) structures and the impact of the Ni layer on the ZnO NR properties. We developed nickel-capped zinc oxide nanorod (ZnO/Ni NR) structures by e-beam evaporation of Ni and the subsequent annealing of the ZnO/Ni core/shell nanostructures. The core/shell NRs annealed at 400 °C showed superior crystalline and emission properties.

Fabry-Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires.

Semiconductor nanowires (NWs) are attracting increasing interest as nanobuilding blocks for optoelectronics and photonics. A novel material system that is highly suitable for these applications are GaNP NWs. In this article, we show that individual GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates can act as Fabry-Perot (FP) microcavities.

Efficient nitrogen incorporation in ZnO nanowires.

One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance spectroscopy.

Effects of Polytypism on Optical Properties and Band Structure of Individual Ga(N)P Nanowires from Correlative Spatially Resolved Structural and Optical Studies.

III-V semiconductor nanowires (NWs) have gained significant interest as building blocks in novel nanoscale devices. The one-dimensional (1D) nanostructure architecture allows one to extend band structure engineering beyond quantum confinement effects by utilizing formation of different crystal phases that are thermodynamically unfavorable in bulk materials. It is therefore of crucial importance to understand the influence of variations in the NWs crystal structure on their fundamental physical properties.

Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures.

Fine-structure splitting (FSS) of excitons in semiconductor nanostructures is a key parameter that has significant implications in photon entanglement and polarization conversion between electron spins and photons, relevant to quantum information technology and spintronics. Here, we investigate exciton FSS in self-organized lateral InAs/GaAs quantum-dot molecular structures (QMSs) including laterally aligned double quantum dots (DQDs), quantum-dot clusters (QCs), and quantum rings (QRs), by employing polarization-resolved microphotoluminescence (μPL) spectroscopy. We find a clear trend in FSS between the studied QMSs depending on their geometric arrangements, from a large FSS in the DQDs to a smaller FSS in the QCs and QRs.

Optimizing GaNP coaxial nanowires for efficient light emission by controlling formation of surface and interfacial defects.

We report on identification and control of important nonradiative recombination centers in GaNP coaxial nanowires (NWs) grown on Si substrates in an effort to significantly increase light emitting efficiency of these novel nanostructures promising for a wide variety of optoelectronic and photonic applications. A point defect complex, labeled as DD1 and consisting of a P atom with a neighboring partner aligned along a crystallographic ⟨ 111 ⟩ axis, is identified by optically detected magnetic resonance as a dominant nonradiative recombination center that resides mainly on the surface of the NWs and partly at the heterointerfaces. The formation of DD1 is found to be promoted by the presence of nitrogen and can be suppressed by reducing the strain between the core and shell layers, as well as by protecting the optically active shell by an outer passivating shell.

Origin of strong photoluminescence polarization in GaNP nanowires.

The III-V semiconductor nanowires (NWs) have a great potential for applications in a variety of future electronic and photonic devices with enhanced functionality. In this work, we employ polarization-resolved microphotoluminescence (μ-PL) spectroscopy to study polarization properties of light emissions from individual GaNP and GaP/GaNP core/shell NWs with average diameters ranging between 100 and 350 nm. We show that the near-band-edge emission, which originates from the GaNP regions of the NWs, is strongly polarized (up to 60% at 150 K) in the direction perpendicular to the NW axis.

Energy upconversion in GaP/GaNP core/shell nanowires for enhanced near-infrared light harvesting.

Semiconductor nanowires (NWs) have recently gained increasing interest due to their great potential for photovoltaics. A novel material system based on GaNP NWs is considered to be highly suitable for applications in efficient multi-junction and intermediate band solar cells. This work shows that though the bandgap energies of GaN(x)P(1-x) alloys lie within the visible spectral range (i.

Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study.

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on Si are studied by employing temperature-dependent continuous wave and time-resolved photoluminescence (PL) spectroscopies. The NWs exhibit bright PL emissions due to radiative carrier recombination in the GaNP shell. Though the radiative efficiency of the NWs is found to decrease with increasing temperature, the PL emission remains intense even at room temperature.

Room-temperature electron spin amplifier based on Ga(In)NAs alloys.

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

Evidence for macroscopic quantum tunneling of phase slips in long one-dimensional superconducting Al wires.

Quantum phase slips have received much attention due to their relevance to superfluids in reduced dimensions and to models of cosmic string production in the early universe. Their establishment in one-dimensional superconductors has remained controversial. Here we study the nonlinear current-voltage characteristics and linear resistance in long superconducting Al wires with lateral dimensions approximately 5 nm.