Pattern transfer with stabilized nanoparticle etch masks.

Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiO(x) substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm.