Atomic Layer Deposition of Transparent p-Type Semiconducting Nickel Oxide Using Ni(DAD) and Ozone.

A novel atomic layer deposition (ALD) process for nickel oxide (NiO) is developed using a recently reported diazadienyl complex, Ni(DAD), and ozone. A window of constant growth per cycle is found between 185 and 200 °C at 0.12 nm/cycle, among the highest reported for ALD NiO.

Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone.

Uniform and conformal deposition of tin oxide thin films is important for several applications in electronics, gas sensing, and transparent conducting electrodes. Thermal atomic layer deposition (ALD) is often best suited for these applications, but its implementation requires a mechanistic understanding of the initial nucleation and subsequent ALD processes. To this end, in situ FTIR and ex situ XPS have been used to explore the ALD of tin oxide films using tributyltin ethoxide and ozone on an OH-terminated, SiO-passivated Si(111) substrate.

Substrate selectivity in the low temperature atomic layer deposition of cobalt metal films from bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid.

The initial stages of cobalt metal growth by atomic layer deposition are described using the precursors bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid. Ruthenium, platinum, copper, Si(100), Si-H, SiO, and carbon-doped oxide substrates were used with a growth temperature of 180 °C. On platinum and copper, plots of thickness versus number of growth cycles were linear between 25 and 250 cycles, with growth rates of 0.

Atomic layer deposition of tungsten(III) oxide thin films from W2(NMe2)6 and water: precursor-based control of oxidation state in the thin film material.

The atomic layer deposition of W2O3 films was demonstrated employing W2(NMe2)6 and water as precursors with substrate temperatures between 140 and 240 degrees C. At 180 degrees C, surface saturative growth was achieved with W2(NMe2)6 vapor pulse lengths of >/=2 s. The growth rate was about 1.