Improving the Antioxidant Properties of Tin-Based Perovskite for the Enhanced Performance of Near-Infrared Light-Emitting Diodes Through the Synergy of Sn and SnF.

Tin-based perovskite has emerged as an excellent luminescent material due to its non-toxicity and narrow bandgap compared to lead-based perovskite. However, its tin ions are easily oxidized by oxygen, which leads to increased vacancy defects and poor crystallinity, presenting a significant challenge in obtaining high-quality perovskite films. In this context, we introduced an approach by synergistically adding SnF and tin powder into the precursor solution to enhance the antioxidation of Sn ions.

Blue Quantum Dot Light-Emitting Diodes toward Full-Color Displays: Materials, Devices, and Large-Scale Fabrication.

Quantum dots (QDs) light-emitting diodes (QLEDs) are gaining significant interest for the next generation of display and lighting applications because of their wide color gamut, cost-effective solution processability, and good stability. The last decades have witnessed rapid advances in improving their efficiency and lifetime. So far, among the three primary colors of QLEDs devices, the performance of blue QLEDs is considerably inferior to that of green and red ones including Cd-based and Cd-free devices, which is a key bottleneck hindering QLEDs' application.

Induced Circularly Polarized Luminescence From 0D Quantum Dots by 2D Chiral Nanosheets.

Materials with circularly polarized luminescence (CPL) exhibit great application potential in biological scenes such as cell imaging, optical probes, etc. However, most developed materials are non-aqueous and toxic, which seriously restricts their compatibility with the life systems. Thus, it is necessary to explore a water-based CPL system with high biocompatibility so that to promote the biologic application process.

Phase stabilization A-site ion anchoring for ultra-stable perovskite light emitting diodes.

A novel ion anchoring strategy stabilizes the perovskite phase, yielding ambient stable perovskite films and ultra-stable perovskite light-emitting diodes (PeLEDs) with an unprecedented operational half-lifetime over 37.2 years at 100 cd m and exceeding 27% efficiency, marking a new stability benchmark for next-generation display and lighting applications.

High-n Phase Suppression for Efficient and Stable Blue Perovskite Light-Emitting Diodes.

Quasi-2D perovskites light-emitting diodes (PeLEDs) have achieved significant progress due to their superior optical and electronic properties. However, the blue PeLEDs still exist inefficient energy transfer and electroluminescence performance caused by mixed multidimensional phase distribution. In this work, transition metal salt (zinc bromide, ZnBr) is introduced to modulate phase distributions by suppressing the nucleation of high n phase perovskites, which effectively shortens the energy transfer path for blue emission.

Multiple Chirality Switching of a Dye-Grafted Helical Polymer Film Driven by Acid & Base.

A stimuli-responsive multiple chirality switching material, which can regulate opposed chiral absorption characteristics, has great application value in the fields of optical modulation, information storage and encryption, etc. However, due to the rareness of effective functional systems and the complexity of material structures, developing this type of material remains an insurmountable challenge. Herein, a smart polymer film with multiple chirality inversion properties was fabricated efficiently based on a newly-designed acid & base-sensitive dye-grafted helical polymer.

Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications.

Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies.

Interfacial Regulation toward Efficient CsPbBr Quantum Dot-Based Inverted Perovskite Light-Emitting Diodes.

Inverted perovskite light-emitting diodes (PeLEDs) based on quantum dots (QDs) are some of the most promising candidates for next-generation lighting and display applications. Due to the strong fluorescence quenching caused by zinc oxide, high performance in such inverted devices remains challenging. Here, we report an efficient inverted green CsPbBr QDs LED using an emitting buffer layer.

Proton-Prompted Ligand Exchange to Achieve High-Efficiency CsPbI Quantum Dot Light-Emitting Diodes.

CsPbI perovskite quantum dots (QDs) are ideal materials for the next generation of red light-emitting diodes. However, the low phase stability of CsPbI QDs and long-chain insulating capping ligands hinder the improvement of device performance. Traditional in-situ ligand replacement and ligand exchange after synthesis were often difficult to control.

Reducing the Open-Circuit Voltage Loss of PbS Quantum Dot Solar Cells via Hybrid Ligand Exchange Treatment.

The interface loss between the active layer and the hole transport layer (HTL) of lead sulfide colloidal quantum dot (PbS-CQD) solar cells is a significant factor influencing the efficiency improvement of PbS colloidal quantum dot solar cells (PbS-CQDSCs). Currently, the most advanced solar cells adopt organic P-type HTLs (PbS-EDT) via solid-state ligand exchange with 1,2-ethanedithiol (EDT) on the CQD top active layer. However, EDT is unable to altogether remove the initial ligand oleic acid from the quantum dot surface, and its high reactivity leads to cracks in the HTL film caused by volume contractions, which inevitably results in significant loss.

Stable Perovskite Quantum Dots Light-Emitting Diodes with Efficiency Exceeding 24.

Perovskite nanocrystals for light-emitting diodes are often synthesized by uncontrollable metathesis reactions, suffering from low product yield, nonuniform growth, and poor stability. Herein, by controlling the nucleation kinetics with high dissociation constant (Ka or Kb) acids or bases, homogenous one-route nucleation of perovskite nanocrystals is achieved as the cluster intermediates are eliminated. The stable, shape uniform, and narrow size distribution green nanocrystals are synthesized.

Improving Perovskite Green Quantum Dot Light-Emitting Diode Performance by Hole Interface Buffer Layers.

Perovskite quantum dot light-emitting diodes (QLEDs) are potential candidates for next-generation displays due to their high color purity and wide color gamut. Due to the strong electron-accepting ability of poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), quantum dot (QD) films are prone to be charged, which leads to the imbalance of charge injection and the increase of nonradiative recombination, ultimately affecting the performance of the QLEDs. Here, we compared and studied two polymers, poly(methyl methacrylate) (PMMA) and poly(vinyl pyrrolidone) (PVP), as the hole interface buffer layers of QD films, which effectively reduced the defect density, suppressed nonradiative recombination, and greatly improved the efficiency and stability of QLEDs.

Glutamine Induced High-Quality Perovskite Film to Improve the Efficiency of NIR Perovskite Light-Emitting Diodes.

Formamidine lead iodide (FAPbI ) is an important material for realizing high-performance near-infrared light-emitting diodes (NIR-LEDs). However, due to the uncontrollable growth of solution-processed films which usually causes low coverage, and poor surface morphology, the development of FAPbI -based NIR-LEDs is hindered, restraining its potential industrial applications. In this work, by employing glutamine (Gln) in perovskite precursor, the quality of FAPbI film is improved significantly.

Highly stable QLEDs with improved hole injection via quantum dot structure tailoring.

For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Developing proper hole transporting materials to match energy levels with quantum dots remains a great challenge to further improve the device efficiency and operation lifetime. Here we demonstrate high-performance quantum dot light-emitting diodes with much extended operation lifetime using quantum dots with tailored energy band structures that are favorable for hole injections.

Improving Charge Injection via a Blade-Coating Molybdenum Oxide Layer: Toward High-Performance Large-Area Quantum-Dot Light-Emitting Diodes.

A solution-processed molybdenum oxide (MoO ) as the hole injection layer (HIL) by doctor-blade coating was developed to improve the efficiency and lifetime of red-emitting quantum-dot light-emitting diodes (QD-LEDs). It has been demonstrated that by adding isopropyl alcohol into the MoO precursor during the doctor-blade coating process, the morphology, composition, and the surface electronic structure of the MoO HIL could be tailored. A high-quality MoO film with optimized charge injection was obtained, based on which all-solution-processed highly efficient red-emitting QD-LEDs were realized by using a low-cost doctor-blade coating technique under ambient conditions.

Origin of Sub-Bandgap Electroluminescence in Organic Light-Emitting Diodes.

Sub-bandgap electroluminescence in organic light emitting diodes is a phenomenon in which the electroluminescence turn-on voltage is lower than the bandgap voltage of the emitter. Based on the results of transient electroluminescence (EL) and photoluminescence and electroabsorption spectroscopy measurements, it is concluded that in rubrene/C60 devices, charge transfer excitons are generated at the rubrene/C60 interface under sub-bandgap driving conditions, leading to the formation of triplet excitons, and sub-bandgap EL is the result of the subsequent triplet-triplet annihilation process.