Publications by authors named "Chao-Yuan Jin"

Article Synopsis
  • The study focuses on achieving precise control of a quantum bit (qubit) within quantum dots, an important aspect for advancing photonic quantum information technologies.
  • Researchers have successfully demonstrated the ability to perform arbitrary rotations on a hole orbital qubit using short optical pulses, allowing for direct phase control.
  • This method utilizes a process called stimulated Raman transitions, enabling fine-tuned control over the angles of the Bloch vector, making orbital states in solid-state quantum emitters useful for fast quantum information processing.
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The construction of a large-scale quantum internet requires quantum repeaters containing multiple entangled photon sources with identical wavelengths. Semiconductor quantum dots can generate entangled photon pairs deterministically with high fidelity. However, realizing wavelength-matched quantum-dot entangled photon sources faces two difficulties: the non-uniformity of emission wavelength and exciton fine-structure splitting induced fidelity reduction.

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Coherently driven semiconductor quantum dots are one of the most promising platforms for non-classical light sources and quantum logic gates which form the foundation of photonic quantum technologies. However, to date, coherent manipulation of single charge carriers in quantum dots is limited mainly to their lowest orbital states. Ultrafast coherent control of high-orbital states is obstructed by the demand for tunable terahertz pulses.

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Photonic crystal lasers with a high-Q factor and small mode volume are ideal light sources for on-chip nano-photonic integration. Due to the submicron size of their active region, it is usually difficult to achieve high output power and single-mode lasing at the same time. In this work, we demonstrate well-selected single-mode lasing in a line-defect photonic crystal cavity by coupling it to the high-Q modes of a short double-heterostructure photonic crystal cavity.

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Background: Computed tomography (CT) is a noninvasive imaging approach to assist the early diagnosis of pneumonia. However, coronavirus disease 2019 (COVID-19) shares similar imaging features with other types of pneumonia, which makes differential diagnosis problematic. Artificial intelligence (AI) has been proven successful in the medical imaging field, which has helped disease identification.

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We demonstrate an effective method for fabricating large area periodic two-dimensional semiconductor nanostructures by means of single-pulse laser interference. Utilizing a pulsed nanosecond laser with a wavelength of 355 nm, precisely ordered square arrays of nanoholes with a periodicity of 300 nm were successfully obtained on UV photoresist and also directly via a resist-free process onto semiconductor wafers. We show improved uniformity using a beam-shaping system consisting of cylindrical lenses with which we can demonstrate highly regular arrays over hundreds of square micrometers.

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Precisely ordered arrays of InAs quantum dots are formed on a nanoisland-structured GaAs (100) surface using in situ laser interference during self-assembled molecular beam epitaxial growth. Nanoislands induced by single-pulse four-beam laser interference act as preferential nucleation sites for InAs quantum dots and result in site occupation dependent on the size of nanoislands, the InAs coverage, and the laser parameters. By optimizing the growth and interference conditions, regular dense ordering of single dots was obtained for the first time using this in situ noninvasive approach.

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The effective manipulation of mode oscillation and competition is of fundamental importance for controlling light emission in semiconductor lasers. Here we develop a rate equation model which considers the spatially modulated gain and spontaneous emission, which are inherently governed by the ripple of the vacuum electromagnetic field in a Fabry-Pérot (FP) microcavity. By manipulating the interplay between the spatial oscillation of the vacuum field and external optical injection via dual-beam laser interference, single longitudinal mode operation is observed in a FP-type microcavity with a side mode suppression ratio exceeding 40 dB.

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We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma etching. An optimized nanostructured surface shows a reduced surface reflectivity down to less than 2.

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The radiative interaction of solid-state emitters with cavity fields is the basis of semiconductor microcavity lasers and cavity quantum electrodynamics (CQED) systems. Its control in real time would open new avenues for the generation of non-classical light states, the control of entanglement and the modulation of lasers. However, unlike atomic CQED or circuit quantum electrodynamics, the real-time control of radiative processes has not yet been achieved in semiconductors because of the ultrafast timescales involved.

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