The impact and correlation of running landing methods on leg movement ability.

: This study aimed to explore the impact of different landing methods on leg movement ability and the relationship between various parameters of leg movement. : This work parameters including stride, contact time, flight time, duty factor, stride angle, vertical stiffness, leg stiffness and peak vertical ground reaction force. Thirty healthy subjects voluntarily participated in this study.

Kinematics Analysis of Male Runners via Forefoot and Rearfoot Strike Strategies: A Preliminary Study.

This study aimed to explore the kinematic characteristics of males using various foot landing strategies. The participants were fifteen male students from Physical Education College, Huaibei (non-professional runners, who did not have a fixed running landing strategy mode) (mean height = 178.20 cm; mean weight = 67.

The Effect of an 8-Week Rope Skipping Intervention on Standing Long Jump Performance.

The purpose of this study was to explore the utility of an 8-week rope skipping intervention in enhancing standing long jump performance was assessed by means of specific kinematic parameters acquired by 3-D space photography. The fifteen male college students from the physical education institute were randomly recruited as the research subjects. Participants first completed a standing long jump test without rope skipping intervention.

Motion Analysis for Jumping Discus Throwing Correction.

The purpose of this study was to explore the kinematical characteristics of jumping discus throwing. Eight male right-handed discus throwers who used to practice the jumping throwing technique were recruited as participants. Two high-speed digital cameras with 120 Hz sampling rate were synchronized to capture the movement.

A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications.

Electrical contacts often dominate charge transport properties at the nanoscale because of considerable differences in nanoelectronic device interfaces arising from unique geometric and electrostatic features. Transistors with a tunable Schottky barrier between the metal and semiconductor interface might simplify circuit design. Here, germanium nanowire (Ge NW) transistors with Cu Ge as source/drain contacts formed by both buffered oxide etching treatments and rapid thermal annealing are reported.