Complementary Circuits with WSe/Organic Semiconductor Heterostructure Field-Effect Transistors.

A device architecture based on heterostructure WSe/organic semiconductor field-effect transistors (FETs) is demonstrated in which ambipolar conduction is virtually eliminated, resulting in essentially unipolar FETs realized from an ambipolar semiconductor. For p-channel FETs, an electron-accepting organic semiconductor such as hexadecafluorocopperphthalocyanine (FCuPc) is used to form a heterolayer on top of WSe to effectively trap any undesirable electron currents. For n-channel FETs, a hole-accepting organic semiconductor such as pentacene is used to reduce the hole currents without affecting the electron currents.

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor.

In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelectric capacitor (FE-FDSOI/FE-FinFET), are experimentally studied. The hysteretic property in input transfer characteristic of those devices is desirable for memory device applications, so that the understanding and modulating the hysteresis window is a key knob in designing the devices. It is experimentally observed that the hysteresis window of FE-FDSOI/FE-FinFET is decreased with (i) increasing the area of the ferroelectric capacitor and/or (ii) decreasing the gate area of baseline FET.