Anticancer Ribosomally Synthesized and Post-Translationally Modified Peptides from Plants: Structures, Therapeutic Potential, and Future Directions.

Cancer remains a significant medical challenge, necessitating the discovery of novel therapeutic agents. Ribosomally synthesized and post-translationally modified peptides (RiPPs) from plants have emerged as a promising source of anticancer compounds, offering unique structural diversity and potent biological activity. This review identifies and discusses cytotoxic RiPPs across various plant families, focusing on their absolute chemical structures and reported cytotoxic activities against cancer cell lines.

Low-Frequency Noise Characteristics in HfO-Based Metal-Ferroelectric-Metal Capacitors.

The transport mechanism of HfO-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current-voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole-Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities () obtained from the LFN measurements followed 1/ noise shapes and exhibited a constant electric field () × / noise behavior.

Normally-off β-GaO MOSFET with an Epitaxial Drift Layer.

A normally-off β-GaO metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed using a technology computer-aided design (TCAD) device simulation, which employs an epitaxial drift layer grown on an -type low-doped body layer. The low-doped body layer under the MOS gate enabled normally-off operation, whereas the epitaxial drift layer determined the on-resistance and breakdown characteristics. The effects of the doping concentration of each layer and thickness of the drift channel layer on the device characteristics were investigated to design a device with a breakdown voltage of 1 kV.

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO Films.

In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achieved after postdeposition annealing at 650 °C, which exhibited a remanent polarization of 8 μC/cm and a coercive electric field of 1.6 MV/cm at 25 °C (room temperature).