Molecular detection is important in biosensing, food safety, and environmental surveillance. The high biocompatibility, superior mechanical stability, and low cost make plasmon-free surface-enhanced Raman scattering (SERS) a promising sensing technique, the ultrahigh sensitivity of which is urgently pursued for realistic applications. As a proof of concept, we report a mechanochemical strategy, which combines the wrinkling and chemical functionalization, to fabricate a plasmon-free SERS platform based on 2D MnPS with a sub-attomolar detection limit.
View Article and Find Full Text PDFArtificial synapses are promising for dealing with large amounts of data computing. Great progress has been made recently in terms of improving the on/off current ratio, the number of states, and the energy efficiency of synapse devices. However, the nonlinear weight update behavior of a synapse caused by the uncertain direction of the conductive filament leads to complex weight modulation, which degrades the delivery accuracy of information.
View Article and Find Full Text PDFAtomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers.
View Article and Find Full Text PDFA spiking neural network consists of artificial synapses and neurons and may realize human-level intelligence. Unlike the widely reported artificial synapses, the fabrication of large-scale artificial neurons with good performance is still challenging due to the lack of a suitable material system and integration method. Here, we report an ultrathin (less than10 nm) and inch-size two-dimensional (2D) oxide-based artificial neuron system produced by a controllable assembly of solution-processed 2D monolayer TiO nanosheets.
View Article and Find Full Text PDFThe non-Markov process exists widely in thermodymanic process, while it usually requires the packing of many transistors and memories with great system complexity in a traditional device structure to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices have the potential for next-generation computing systems with much-reduced complexity. Here, we achieve a non-Markov chain in an individual RRAM device based on 2D mineral material mica with a vertical metal/mica/metal structure.
View Article and Find Full Text PDFThe controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D InSe with large domain sizes and high quality. The uniqueness of this confined micro-reactor is that its size is ~10-10 times smaller than that of a conventional reactor.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2018
Flexible chemical sensors usually require transfer of prepared layers or whole device onto special flexible substrates and further attachment to target objects, limiting the practical applications. Herein, a sprayed gas sensor array utilizing silver nanoparticles (AgNPs)-all-carbon hybrid nanostructures is introduced to enable direct device preparation on various target objects. The fully flexible device is formed using metallic single-walled carbon nanotubes as conductive electrodes and AgNPs-decorated reduced graphene oxide as sensing layers.
View Article and Find Full Text PDFGraphene-based optoelectronic devices have attracted much attention due to their broadband photon responsivity and fast response time. However, the performance of such graphene-based photodetectors is greatly limited by weak light absorption and low responsivity induced by the gapless nature of graphene. Here, we achieved a high responsivity above 10 AW for Ultraviolet (UV) light in a hybrid structure based phototransistor, which consists of CVD-grown monolayer graphene and ZnSe/ZnS core/shell quantum dots.
View Article and Find Full Text PDFInspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS heterojunction. Good gate-tunable current-rectifying characteristics are observed with a rectification ratio of 10 at V = 10 V, which may offer an evidence on the existence of the heterojunction. Upon illumination from ultraviolet to visible light, the multilayer/monolayer MoS heterojunction shows outstanding photodetective performance, with a photoresponsivity of 10 A/W, a photosensitivity of 1.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2016
A flexible photodetector based on the bulk heterojunction of an organometallic halide perovskites CHNHPbI and an organic dye Rhodamine B (RhB) has been fabricated via a solution casting process. It showed a high responsivity (R = 43.6 mA/W) to visible lights, short response time (t ≈ 60 ms, t ≈ 40 ms), high on-off ratio (I/I ≈ 287) and satisfactory stability because of its Schottky barrier structure and the dye enhanced light absorption.
View Article and Find Full Text PDFA lateral photodetector based on the bilayer composite film of a perovskite and a conjugated polymer is reported. It exhibits significantly enhanced responsivity in the UV-vis region and sensitive photoresponse in the near-IR (NIR) region at a low applied voltage. This broadband photodetector also shows excellent mechanical flexibility and improved environmental stability.
View Article and Find Full Text PDFUnlabelled: Using poly (3,4-ethylene-dioxythiophene): poly(styrenesulfonate) (
Pedot: PSS) as an effective hole collecting layer, high-efficiency
Pedot: PSS/n-Si hybrid solar cells are fabricated and a power conversion efficiency (PCE) of 12.13% is obtained. After being treated by HNO3 vapor, the PCE value of
Pedot: PSS/n-Si hybrid solar cells enhances from 12.