Improving the brain image resolution of generalized q-sampling MRI revealed by a three-dimensional CNN-based method.

Background: Understanding neural connections facilitates the neuroscience and cognitive behavioral research. There are many nerve fiber intersections in the brain that need to be observed, and the size is between 30 and 50 nanometers. Improving image resolution has become an important issue for mapping the neural connections non-invasively.

Disrupted white matter network of brain structural connectomes in bipolar disorder patients revealed by q-ball imaging.

Background: Structural and functional brain changes have been found to be associated with altered emotion and cognition in patients with bipolar disorder (BD). Widespread microstructural white matter abnormalities have been observed using traditional structural imaging in BD. q-Ball imaging (QBI) and graph theoretical analysis (GTA) improve the specificity and sensitivity and high accuracy of fiber tracking.

Magnetic Resonance-Based Synthetic Computed Tomography Using Generative Adversarial Networks for Intracranial Tumor Radiotherapy Treatment Planning.

The purpose of this work is to develop a reliable deep-learning-based method that is capable of synthesizing needed CT from MRI for radiotherapy treatment planning. Simultaneously, we try to enhance the resolution of synthetic CT. We adopted pix2pix with a 3D framework, which is a conditional generative adversarial network, to map the MRI data domain into the CT data domain of our dataset.

A CNN-Based Autoencoder and Machine Learning Model for Identifying Betel-Quid Chewers Using Functional MRI Features.

Betel quid (BQ) is one of the most commonly used psychoactive substances in some parts of Asia and the Pacific. Although some studies have shown brain function alterations in BQ chewers, it is virtually impossible for radiologists' to visually distinguish MRI maps of BQ chewers from others. In this study, we aimed to construct autoencoder and machine-learning models to discover brain alterations in BQ chewers based on the features of resting-state functional magnetic resonance imaging.

Investigating the white matter correlates of reading performance: Evidence from Chinese children with reading difficulties.

Purpose: Reading comprehension is closely associated with word recognition, particularly at the early stage of reading development. This association is reflected in children with reading difficulties (RD) who demonstrate poor reading comprehension along with delayed word recognition or reduced recognition accuracy. Although the neural mechanisms underlying reading comprehension and word recognition are well studied, few has investigated the white matter (WM) structures that the two processes potentially share.

Flexible Photonic Crystal Material for Multiple Anticounterfeiting Applications.

In this study, a nanoimprinting method was introduced to fabricate polycarbonate films with transparent and flexible photonic crystal (FPC) structures. The fabricated flexible polymer films display a full-color grating because of the nanohemispherical structures on the surface. Through the Bragg diffraction formula, it was confirmed that the FPC polymer films transfer a part of the light energy to the second-order diffraction spectrum.

Effects of crystallization and non-lattice oxygen atoms on Cu(x)O-based resistive switching memory.

In this work, the effects of crystallization and non-lattice oxygen atoms on the Cu(x)O-based memory device are investigated. The 150 degrees C-deposited Cu(x)O film possesses a larger amount of non-lattice oxygen atoms than those deposited at the higher temperatures, leading to the formation of AIOy interface layer during the sputtering deposition of Al top electrode. Resistive switching occurring within the interface layer is easily controlled, so the set and reset voltages are decreased.

Formation and rupture of Ag conductive bridge in ZrO2-based resistive switching memory.

ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. However, the resistive switching mechanism of the ZrO2-based memory device is still controversial. In this study, the mechanism of the ZrO2-based memory device is demonstrated that the resistive switching occurs because of the migration of Ag+ ions.

Effect of non-lattice oxygen on ZrO2-based resistive switching memory.

ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO2/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO2 film is only 20 nm.