Voltage-controlled magnetic anisotropy gradient-driven skyrmion-based half-adder and full-adder.

Spintronic devices have revolutionized the way we process or store information compared to dissipative charge-based electronics. Among various spin-based technologies, skyrmions - topologically protected nano-size spin textures - have emerged as the most promising alternative for future data processing. Here, we have proposed binary adder circuits - central to most digital logic circuits - based on skyrmions.

Proximity induced band gap opening in topological-magnetic heterostructure (NiFe/p-TlBiSe/p-Si) under ambient condition.

The broken time reversal symmetry states may result in the opening of a band gap in TlBiSe leading to several interesting phenomena which are potentially relevant for spintronic applications. In this work, the quantum interference and magnetic proximity effects have been studied in NiFe/p-TlBiSe/p-Si (Magnetic/TI) heterostructure using physical vapor deposition technique. Raman analysis shows the symmetry breaking with the appearance of A mode.

Chemical Approach Towards Broadband Spintronics on Nanoscale Pyrene Films.

The injection of pure spin current into the non-magnetic layer plays a crucial role in transmitting, processing, and storing data information in the realm of spintronics. To understand broadband molecular spintronics, pyrene oligomer film (≈20 nm thickness) was prepared using an electrochemical method forming indium tin oxide (ITO) electrode/pyrene covalent interfaces. Permalloy (Ni Fe ) films with different nanoscale thicknesses were used as top contact over ITO/pyrene layers to estimate the spin pumping efficiency across the interfaces using broadband ferromagnetic resonance spectra.

Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device.

Magnetic skyrmions are topologically protected spin textures and they are suitable for future logic-in-memory applications for energy-efficient, high-speed information processing and computing technologies. In this work, we have demonstrated skyrmion-based 3 bit majority logic gate using micromagnetic simulations. The skyrmion motion is controlled by introducing athat works on voltage controlled magnetic anisotropy.

Skyrmion based 3D low complex runtime reconfigurable architecture design methodology of universal logic gate.

In this study, we introduce the area efficient low complex runtime reconfigurable architecture design methodology based on Skyrmion logic for universal logic gate (ULG) i.e. NOR/NAND implementation using micromagnetic simulations.

Giant spin pumping at the ferromagnet (permalloy) - organic semiconductor (perylene diimide) interface.

Pure spin current based devices have attracted great interest in recent days. Spin current injection into non-magnetic materials is essential for the design and development of such pure spin current based devices. In this context, organic semiconductors (OSCs) can be potential non-magnetic materials over widely explored heavy metals.

Effect of seed layer thickness on the Ta crystalline phase and spin Hall angle.

Heavy metal-ferromagnet bilayer structures have attracted great research interest for charge-to-spin interconversion. In this work, we investigated the effect of the permalloy (Py) seed layer on the tantalum (Ta) polycrystalline phase and its spin Hall angle. Interestingly, for the same deposition rates the crystalline phase of Ta deposited on the Py seed layer strongly depends on the thickness of the seed layer.

An advancement in the synthesis of unique soft magnetic CoCuFeNiZn high entropy alloy thin films.

Discovery of advanced soft-magnetic high entropy alloy (HEA) thin films are highly pursued to obtain unidentified functional materials. The figure of merit in current nanocrystalline HEA thin films relies in integration of a simple single-step electrochemical approach with a complex HEA system containing multiple elements with dissimilar crystal structures and large variation of melting points. A new family of Cobalt-Copper-Iron-Nickel-Zinc (Co-Cu-Fe-Ni-Zn) HEA thin films are prepared through pulse electrodeposition in aqueous medium, hosts nanocrystalline features in the range of ~ 5-20 nm having FCC and BCC dual phases.

Effect of magnetic field on the electronic transport in trilayer graphene.

The perpendicular magnetic field dependence of the longitudinal resistance in trilayer graphene at various temperatures has been systematically studied. For a fixed magnetic field, the trilayer graphene displays an intrinsic semiconductor behavior over the temperature range of 5-340 K. This is attributed to the parabolic band structure of trilayer graphene, where the Coulomb scattering is a strong function of temperature.