Highly Efficient Room Temperature NO Sensor Using Two-Phase TiO Heterogeneous Nanoparticles.

In this study, we successfully synthesized two-phase titanium oxide (TiO) heterogeneous nanoparticles (NPs) using an advanced sol-gel method, a significant stride in developing efficient, room temperature (RT) NO gas sensors. The prepared two-phase TiO heterogeneous NPs exhibited exceptional sensitivity to low concentrations of NO gas at RT. The heightened gas response was attributed to a significant presence of oxygen vacancies, creating intermediate states within the two-phase heterostructures and thus narrowing the band gap.

Investigation of TiO nanoparticle interactions in the fibroblast NIH-3T3 cells via liquid-mode atomic force microscope.

Long before we recognized how significant they were, nanoparticles were already all around in the environment. Since then, an extensive number of synthetic nanoparticles have been engineered to improve our quality of life through rigorous scientific research on their uses in practically every industry, including semiconductor devices, food, medicine, and agriculture. The extensive usage of nanoparticles in commodities that come into proximity with human skin and internal organs through medicine has raised significant concerns over the years.

Ag-Decorated Vertically Aligned ZnO Nanorods for Non-Enzymatic Glucose Sensor Applications.

The non-enzymatic glucose sensing response of pure and Ag-decorated vertically aligned ZnO nanorods grown on Si substrates was investigated. The simple low-temperature hydrothermal method was employed to synthesize the ZnO NRs on the Si substrates, and then Ag decoration was achieved by sputtering. The crystal structure and surface morphologies were characterized by X-ray diffraction, field-emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM).

High-Quality Single-Crystalline -GaO Nanowires: Synthesis to Nonvolatile Memory Applications.

One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides.

The mechanism underlying silicon oxide based resistive random-access memory (ReRAM).

In this work, we have inspected the theoretical resistive switching properties of two ReRAM models based on heterojunction structures of Cu/SiO nanoparticles (NPs)/Si and Si/SiO NPs/Si, in which dielectric layers of the silica nanoparticles present dislocations at bicrystal interfaces. To validate the theoretical model, a charge storage device with the structure Cu/SiO /Si was fabricated and its ReRAM properties were studied. Our examinations on the electrical, thermal and structural aspects of resistive switching uncovered the switching behavior relies upon the material properties and electrical characteristics of the switching layers, as well as the metal electrodes and the interfacial structure of grains within the dielectric materials.