A review on III-V compound semiconductor short wave infrared avalanche photodiodes.

The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated photonics system. Specifically, III-V compound APD has become one of the main applications of optical fiber communication reception due to adaptable bandgap and low noise characteristics. The advancement of structural design and material choice has emerged as a means to improve the performance of APDs.

Fabrication of graphene: CdSe quantum dots/CdS nanorod heterojunction photodetector and role of graphene to enhance the photoresponsive characteristics.

Integration of graphene with semiconducting quantum dots (QDs) provides an elegant way to access the intrinsic properties of graphene and optical properties of QDs concurrently to realize the high-performance optoelectronic devices. In the current article, we have demonstrated the high-performance photodetector based on graphene: CdSe QDs/CdS nanorod heterostructures. The resulting heterojunction photodetector with device configuration ITO/graphene: CdSe/CdS nanorods/Ag show excellent operating characteristics including a maximum photoresponsivity of 15.

Interlayer of PMMA Doped with Au Nanoparticles for High-Performance Tandem Photodetectors: A Solution to Suppress Dark Current and Maintain High Photocurrent.

Currently, colloidal quantum dots (CQDs)-based photodetectors are widely investigated due to their low cost and easy integration with optoelectronic devices. The requirements for a high-performance photodetector are a low dark current and a high photocurrent. Normally, photodetectors with a low dark current also possess a low photocurrent, or photodetectors with reduced dark current possess a reduced photocurrent, resulting in low detectivity.

Self-powered, all-solution processed, trilayer heterojunction perovskite-based photodetectors.

Heterostructures composed of nano-/micro-junctions, combining the excellent photon harvesting properties of nano-systems and the ultrafast carrier transfer of micro-systems, have a promising role in high-performance photodetectors. In this paper, a highly-sensitive trilayer self-powered perovskite-based photodetector ITO/ZnO (70 nm)/CdS (150 nm)/CsPbBr (200 nm)/Au, in which the CdS nanorods (NRs) layer is sandwiched between a ZnO/CsPbBr interface to reduce the interfacial charge carriers' recombination and the charge transport resistance, is presented. Due to the strong built-in potential and the internal driving electric-field, an ultra-high On/Off current ratio of 10 with a responsivity of 86 mA W and a specific detectivity of 6.

All-solution-processed UV-IR broadband trilayer photodetectors with CsPbBr colloidal nanocrystals as carriers-extracting layer.

Colloidal quantum dots (CQDs) are very promising nanomaterials for optoelectronics due to their tunable bandgap and quantum confinement effect. All-inorganic CsPbX (X = Br, Cl and I) perovskite nanocrystals (NCs) have attracted enormous interests owing to their promising and exciting applications in photovoltaic devices. In this paper, all-solution-processed UV-IR broadband trilayer photodetectors ITO/ZnO/PbS/CsPbBr/Au and ITO/ZnO/CsPbBr/PbS/Au with high performance were presented.

Solution-phase, template-free synthesis of PbI and MAPbI nano/microtubes for high-sensitivity photodetectors.

Organic-inorganic hybrid perovskite materials with exotic semiconducting properties have become inevitable candidates for next-generation electronic devices. Very recently, a low dimensional nanostructure of the perovskite materials has attracted the scientific community due to its enhanced performance in optoelectronics as compared to its bulk counterparts. Herein, a facile method was developed for the scalable, room-temperature synthesis of CH3NH3PbI3 (MAPbI3) nano/microtubes by direct conversion of lead iodide (PbI2) microtubes through a solution-phase method.

Highly flexible memristive devices based on MoS quantum dots sandwiched between PMSSQ layers.

This paper reports a facile, cost effective method that uses an aqueous hydrothermal process for synthesizing two-dimensional molybdenum disulphide (MoS2) monolayer quantum dots (QDs) and their potential applications in flexible memristive devices. High-resolution transmission electron microscopy and atomic force microscopy images confirmed that the diameters of the synthesized MoS2 QDs with irregular shapes were in the range between 3 and 6 nm; their thicknesses were confirmed to lie between 1.0 and 0.

A one-step method to synthesize CHNHPbI:MoS nanohybrids for high-performance solution-processed photodetectors in the visible region.

A facile method to synthesize a CHNHPbI: MoS nanohybrid for high-performance solution-processed photodetectors is presented. The interfacial charge carriers transfer due to the existence of heterojunctions between the 2D MoS nanosheet and perovskite cuboids are utilized to enhance the device performance. The dark current of the photodiode Au/CHNHPbI: MoS/Au was suppressed and its photocurrent was enhanced when compared to a pristine perovskite nanocrystal device Au/CHNHPbI/Au.

Inkjet-Printed Photodetector Arrays Based on Hybrid Perovskite CHNHPbI Microwires.

Hybrid perovskite CHNHPbI has attracted extensive research interests in optoelectronic devices in recent years. Herein an inkjet printing method has been employed to deposit a perovskite CHNHPbI layer. By choosing the proper solvent and controlling the crystal growth rate, hybrid perovskite CHNHPbI nanowires, microwires, a network, and islands were synthesized by means of inkjet printing.

All-solution processed semi-transparent perovskite solar cells with silver nanowires electrode.

In this work, we report an all-solution route to produce semi-transparent high efficiency perovskite solar cells (PSCs). Instead of an energy-consuming vacuum process with metal deposition, the top electrode is simply deposited by spray-coating silver nanowires (AgNWs) under room temperature using fabrication conditions and solvents that do not damage or dissolve the underlying PSC. The as-fabricated semi-transparent perovskite solar cell shows a photovoltaic output with dual side illuminations due to the transparency of the AgNWs.

Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching.

The direct observation of single crystal graphene growth and its shape evolution is of fundamental importance to the understanding of graphene growth physicochemical mechanisms and the achievement of wafer-scale single crystalline graphene. Here we demonstrate the controlled formation of single crystal graphene with varying shapes, and directly observe the shape evolution of single crystal graphene by developing a localized-heating and rapid-quenching chemical vapor deposition (CVD) system based on electromagnetic induction heating. Importantly, rational control of circular, hexagonal, and dendritic single crystalline graphene domains can be readily obtained for the first time by changing the growth condition.