Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory.

The analog resistive switching properties of amorphous InGaZnO (a-IGZO)-based devices with Al as the top and bottom electrodes and an Al-O interface layer inserted on the bottom electrode are presented here. The influence of the electrode deposition rate on the surface roughness was established and proposed as the cause of the observed unusual anomalous switching effects. The DC electrical characterization of the optimized Al/a-IGZO/AlO/Al devices revealed an analog resistive switching with a satisfactory value for retention levels, but the endurance was found to decrease after 200 cycles.