Organic bistable devices (OBDs) based on CdSe/CdS/ZnS core-shell-shell nanoparticles embedded in a polystyrene (PS) layer with an inserted WO3 layer were fabricated by using the spin coating method and the thermal evaporation. The current density-voltage (J-V) curves for the Al/CdSe/CdS/ZnS core-shell-shell nanoparticles embedded in PS layer/WO3/ITO devices with different thicknesses of WO3 layers exhibited electrical bistabilities. Simulated J-V curves for the OBDs containing CdSe/CdS/ZnS core-shell-shell nanoparticles were in reasonable agreement with the experimental results.
View Article and Find Full Text PDFA compact model of the current-voltage (I-V) characteristics for the Si nanowire field effect transistor (FET) taking into account dependence of the analytical electrical properties on the diameter and the concentration of the Si nanowire of the FETs with a Schottky metal-semiconductor contact has been proposed. I-V characteristics of the nanowire FETs were analytically calculated by using a quantum drift-diffusion current transport model taking into account an equivalent circuit together with the quantum effect of the Si nanowires and a Schottky model at Schottky barriers. The material parameters dependent on different diameters and concentrations of the Si nanowire were numerically estimated from the physical properties of the Si nanowire.
View Article and Find Full Text PDFWhite light-emitting diodes (WLEDs) with a hybrid poly N-vinylcarbazole (PVK) and poly(methyl methacrylate) (PMMA) polymer and ZnO quantum dots (QDs) were fabricated by a spin-coating technique. Transmission electron microscopy images showed that the ZnO QDs were predominantly distributed at the circumference of the surface of the PVK polymer. Electroluminescence spectra for hybrid polymer-QD WLEDs showed a broad peak around 600 nm.
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