Thermal atomic layer deposition of ErO films from a volatile, thermally stable enaminolate precursor.

Thin films of ErO films were grown by atomic layer deposition using the Er precursor tris(1-(dimethylamino)-3,3-dimethylbut-1-en-2-olate)erbium(III) (Er(L)), with water as the co-reactant. Saturative, self-limited growth was observed at a substrate temperature of 200 °C for pulse lengths of ≥4.0 s for Er(L) and ≥0.