Characteristics and Electronic Band Alignment of a Transparent -CuI/-SiZnSnO Heterojunction Diode with a High Rectification Ratio.

Transparent -CuI/-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented -CuI polycrystalline film on top of an amorphous -SZTO film grown by the RF magnetron sputtering method. A nitrogen annealing process reduces ionized impurity scattering dominantly incurred by Cu vacancy and structural defects at the grain boundaries in the CuI film to result in improved diode performance; the current rectification ratio estimated at ±2 V is enhanced from ≈10 to ≈10. Various diode parameters, including ideality factor, reverse saturation current, offset current, series resistance, and parallel resistance, are estimated based on the Shockley diode equation.

Boosting Solar Cell Performance via Centrally Localized Ag in Solution-Processed Cu(In,Ga)(S,Se) Thin Film Solar Cells.

Fabrication of Cu(In,Ga)(S,Se) (CIGSSe) absorber films from environmentally friendly solutions under ambient air conditions for use in solar cells has shown promise for the low-cost mass production of CIGSSe solar cells. However, the limited power conversion efficiency (PCE) of these solar cells compared with their vacuum-processed counterparts has been a critical setback to their practical applications. This study aims to fabricate solution-processed CIGSSe solar cells with high PCEs by incorporation of Ag into the precursor layer of the CIGSSe absorber films.

Improvement in Power of Shingled Solar Cells for Photo-Voltaic Module.

This paper presents a study on the effects of heat treatment conditions on electrically conductive adhesives. Among the advantages of the shingled solar cells include larger active area and smaller current density since one of the main factors of the power loss is due to a decrease in current density. Therefore, when there is a small current, there is a benefit in regards to the power loss.

Analysis of Resistance According to Metal Ribbon Connection for Application to Interconnection of Shingled Photovoltaic Strings.

The Shingle Photovoltaic (PV) module is a new high power PV module technology manufactured by 'Dividing and ECA (Electrical Conductivity Adhesive) bonding' method for solar cell. In the case of a general PV module, a metal ribbon is soldered on the bus bar of the solar cell and connected to others. The dividing/ECA bonding technology connects the divided cells through bonding to manufacture a string.

Electron Beam Irradiated Al Doped ZnO Thin Films as Efficient Tunnel Recombination Junction for Hydrogenated Amorphous Silicon/Cu(In,Ga)Se₂ Tandem Solar Cells.

A tunnel recombination junction (TRJ) layer for hydrogenated amorphous silicon (a-Si:H)/ Cu(In,Ga)Se₂ (CIGS) tandem solar cells is investigated. An Al-doped zinc oxide (AZO) thin film is applied to the TRJ, and the influence of electron beam (e-beam) irradiation on defects along the TRJ is investigated. The AZO thin films are prepared using radio frequency (RF) sputtering and the e-beam is irradiated at 200 W RF power and 2 keV DC power for 5 min.

Electrically Conductive Adhesives and the Shingled Array Cell for High Density Modules.

The shingled array of solar cells has the advantages of a larger active area and smaller current density than conventional solar cells. Because the power loss is mainly driven by the decrease in current density, this new method has the benefit of increasing module power with the same installed area as used in other methods. As the electrically conductive adhesive (ECA), CA3556HF was chosen and characterized by analysis of reflectance and sheet resistance.

Enhanced Photocurrents with ZnS Passivated Cu(In,Ga)(Se,S) Photocathodes Synthesized Using a Nonvacuum Process for Solar Water Splitting.

Chalcopyrite Cu(In,Ga)(Se,S) (CIGS) semiconductors are potential candidates for use in photoelectrochemical (PEC) hydrogen generation due to their excellent optical absorption properties and high conduction band edge position. In the present research, CIGS thin film was successfully prepared on a transparent substrate (F:SnO glass) using a solution-based process and applied for a photocathode in solar water splitting, which shows control of the surface state associated with sulfurization/selenization process significantly influences on the PEC activity. A ZnS passivation surface layer was introduced, which effectively suppresses charge recombination by surface states of CIGS.

Characterization of Flexible CIGS Thin Film Solar Cells or Stainless Steel with Intrinsic ZnO Diffusion Barriers.

ZnO diffusion barrier layer was deposited by RF magnetron sputtering by using the same method as intrinsic ZnO layer. The CIGS solar cells were fabricated on stainless steel substrate. The 50-200 nm thin ZnO diffusion barriers effectively reduced the diffusion of Fe and Cr, from stainless steel substrates into the CIGS absorbers.

Rapid Annealing of Cu-In-Ga-Se Precursors by Electron Beam Irradiation Method.

Cu-In-Ga-Se precursors were prepared by RF- and DC-sputtering methods and then irradiated with an in-situ electron beam irradiation unit. Ternary (In,Ga)Se2 and binary CuSe targets were simultaneously used for preparation of precursors. The electron dose and irradiation time were kept constant at 300 seconds and 200 W of RF power, respectively, while intensities of accelerated electrons were varied from 2.

Effect of Reaction Temperature of CdS Buffer Layers by Chemical Bath Deposition Method.

This study investigated CdS deposition on a Cu(In,Ga)Se2 (CIGS) film via chemical bath deposition (CBD) in order to obtain a high-quality optimized buffer layer. The thickness and reaction temperature (from 50 degrees C to 65 degrees C) were investigated, and we found that an increase in the reaction temperature during CBD, resulted in a thicker CdS layer. We obtained a thin film with a thickness of 50 nm at a reaction temperature of 60 degrees C, which also exhibited the highest photoelectric conversion efficiency for use in solar cells.

Improvement of Pre-Annealed Cu(In, Ga)Se2 Absorbers for High Efficiency.

We used a DC-sputtering method to deposit the precursor (Cu3Ga/In) onto Mo with 1 um thick/soda-lime glass (SLG). We moved it onto a graphite crucible for the pre-annealing process, and the pressure of the process tube was about 10 torr without Ar gas flow. The crucible in quartz tube was heated by halogen lamp to 250 degrees C for 30 min, and then raised to 550 degrees C for 10 min under a selenium atmosphere.

Gravure-Offset Printed Metallization of Multi-Crystalline Silicon Solar Cells with Low Metal-Line Width for Mass Production.

The gravure offset method has been developed toward an industrially viable printing technique for electronic circuitry. In this paper, a roller type gravure offset manufacturing process was developed to fabricate fine line for using front electrode for solar cells. In order to obtain the optimum metallization printing lines, thickness of 20 μm which is narrow line is required.

Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.

Preparation of Periodically Arrayed Silicon Microwires Using Simple Patterning Process.

The silicon (Si) microwires were fabricated by microsphere lithography using polystyrene (PS) beads monolayer. The Si wafer tailored into 40 x 40 mm2 was used as a substrate. The monolayer of 2.

Properties of Electron-Beam Irradiated CuInSe2 Layers by Multi-Step Sputtering Method.

Typically, CuInSe2 (CIS) based thin films for photovoltaic devices are deposited by co-evaporation or by deposition of the metals, followed by treatment in a selenium environment. This article describes CIS films that are instead deposited by DC and RF magnetron sputtering from binary Cu2Se and In2Se3 targets without the supply of selenium. As a novel method, electron beam annealing was used for crystallization of Cu2Se/In2Se3 stacked precursors.

Characteristics of Carrier Collection of Nanopillar-Patterned Silicon Solar Cells.

Nanopillar-patterned Si solar cells were investigated. Ag nanoparticles were coated on a polished Si substrate as an etching mask. Reactive ion etching caused Si nanopillars to replicate in a reverse fashion on the Ag nanoparticles over a large area.

Direct metallization local Al-back surface field for high efficiency screen printed crystalline silicon solar cells.

In this paper, we present a detailed study on the local back contact (LBC) formation of rear-surface-passivated silicon solar cells, where both the LBC opening and metallization are realized by one-step alloying of a dot of fine pattern screen-printed aluminum paste with the silicon substrate. Based on energy dispersive spectrometer (EDS) and scanning electron microscopy (SEM) characterizations, we suggest that the aluminum distribution and the silicon concentration determine the local-back-surface-field (Al-p+) layer thickness, resistivity of the Al-p+ and hence the quality of the Al-p+ formation. The highest penetration of silicon concentration of 78.

Effect on electron beam treatment of radio frequency sputtered i-ZnO thin films for solar cell applications.

Intrinsic ZnO (i-ZnO) thin films were prepared using radio frequency (RF) sputtering method with working pressure range of 1-20 mTorr and treated by electron beam (e-beam) irradiation unit with 300 W of RF power and 2.5 kV of DC power for 5 min. As working pressure increased to 20 mTorr, deposition rate of samples gradually decreased from 0.

Investigation on properties of electron-beam treated Mo back contact layer prepared by DC sputtering method.

Molybdenum (Mo) has been used as back contact layer in chalcopyrite solar cells family (CulnSe2 and its alloys) because it showed the excellence of electrical properties such as low resistivity at the Mo interference. Generally, there are strong corrleations between working pressure and properites such as adhesion and conductivity during deposition of Mo layer. Electrical properites might be inversely proportional to adehsion between Mo layer and glass substrate.

Effect on thickness of Al layer in poly-crystalline Si thin films using aluminum(Al) induced crystallization method.

The polycrystalline silicon (poly-Si) thin films were prepared by aluminum induced crystallization. Aluminum (Al) and amorphous silicon (a-Si) layers were deposited using DC sputtering and plasma enhanced chemical vapor deposition method, respectively. For the whole process Al properties of bi-layers can be one of the important factors.

Preparation of born-doped a-SiC:H thin films by ICP-CVD method and to the application of large-area heterojunction solar cells.

Hydrogenated amorphous silicon carbide (a-SiC:H) film has been widely used as an emitter p layer in solar cells. For the better p layer, wide optical bandgap, and high electrical conductivity should be obtained from the effective method. We prepared the boron-doped a-SiC:H thin films using inductively coupled plasma chemical vapor deposition (ICP-CVD) method and characteristics on the small-area (2 cm x 2 cm) as well as the large-area films (diameter of 100 mm) were shown on it.

Preparation of phosphorus doped hydrogenated microcrystalline silicon thin films by inductively coupled plasma chemical vapor deposition and their characteristics for solar cell applications.

Intrinsic and phosphorus-doped hydrogenated microcrystalline silicon (microc-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition (ICP-CVD) method. Structural, electrical and optical properties of these films were studied as a function of silane concentration, ICP source power and PH3/SiH4 gas ratio. Characterization of these films from Raman spectroscopy and X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network.

Investigation on the surface passivation of intrinsic a-Si:H thin films prepared by inductively coupled plasma-chemical vapor deposition for heterojunction solar cell applications.

Intrinsic a-Si:H thin films, which can have passivation functions on the surface of crystalline Si, were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD). The properties of the films were investigated at deposition temperatures ranging from 50 to 400 degrees C. The Si--H stretching mode at 2000 cm(-1), which indicates good film quality, was found in the range of 150-400 degrees C, but the film quality was not good at deposition temperatures below 150 degrees C.

Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications.

The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness.

Fabrication and optical characteristics of a novel optical fiber doped with the Au nanoparticles.

Optical fibers containing gold metal nanoparticles were developed by modified chemical vapor deposition, in which Au(OH)3 and tetraethyl-orthosilicate (TEOS) was used via sol-gel process to incorporate gold metals by providing the reduction atmosphere. The absorption peak appeared near 490 nm was found to be due to the surface plasmon resonance of the gold nanoparticles incorporated in the fiber core.