Depth profiling and standardization from the back side of a sample for accurate analyses: Emphasis on quantifying low-fluence, shallow implants in diamond-like carbon.

Rationale: Back-side thinning of wafers is used to eliminate issues with transient sputtering when analyzing near-surface element distributions. Precise and accurate calibrated implants are created by including a standard reference material during the implantation. Combining these methods allows accurate analysis of low-fluence, shallow features even if matrix effects are a concern.