Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study.

We investigate the effect of low concentrations of iron on the physical properties of SnS van der Waals crystals grown from the melt. By means of scanning tunneling microscopy (STM) and photoemission spectroscopy we study Fe-induced defects and observe an electron doping effect in the band structure of the native p-type SnS semiconductor. Atomically resolved and bias dependent STM data of characteristic defects are compared to density functional theory simulations of vacancy (V and V), Fe substitutional (Fe), and Fe interstitial (Fe) defects.

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere.

This study deals with the preparation and characterization of metallic nanoinclusions on the surface of semiconducting BiSe that could be used for an enhancement of the efficiency of thermoelectric materials. We used Au forming a 1D alloy through diffusion (point nanoinclusion) and Mo forming thermodynamically stable layered MoSe nanosheets through the reaction with the BiSe. The Schottky barrier formed by the 1D and 2D nanoinclusions was characterized by means of atomic force microscopy (AFM).