The adsorption of oxygen and its reaction with target gases are the basis of the gas detection mechanism by using metal oxides. Here, we present a theoretical analysis of the sensor response, within the ionosorption model, for an n-type polycrystalline semiconductor. Our goal of our work is to reveal the mechanisms of gas sensing from a fundamental point of view.
View Article and Find Full Text PDFIn the original paper, Zhao and co-workers describe a sensing model to explain the response to a reducing gas as a function of the oxygen partial pressure. In this Comment we specifically analyze the basic gas detection mechanisms proposed in such a work and expressed through surface reactions (eqs 1-5). The consequence of these presented mechanisms lead to inconsistencies that are also regularly found in the literature.
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