One-step growth of thin film SnS with large grains using MOCVD.

Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin-doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with potential use of its transparency for bifacial illumination. Tetraethyltin and ditertiarybutylsulphide were used as precursors with process temperatures 430-470 °C to promote film growth with large grains.