In-Gap States and Band-Like Transport in Memristive Devices.

Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations.

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO/Ti/Pt Nanosized ReRAM Devices.

Redox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications beyond von Neumann computing. The prevailing, so-called, counter-eight-wise (c8w) polarity of the switching hysteresis in filamentary-type valence change mechanism devices originates from a temperature- and field-controlled drift-diffusion process of mobile ions, predominantly oxygen vacancies in the switching oxide. Recently, a bipolar resistive switching (BRS) process with opposite polarity, so-called, eight-wise (8w) switching, has been reported that, especially for TiO cells, is still not completely understood.

Characterization of the diffusion coefficient of blood.

Purpose: To characterize the diffusion coefficient of human blood for accurate results in intravoxel incoherent motion imaging.

Methods: Diffusion-weighted MRI of blood samples from 10 healthy volunteers was acquired with a single-shot echo-planar-imaging sequence at body temperature. Effects of gradient profile (monopolar or flow-compensated), diffusion time (40-100 ms), and echo time (60-200 ms) were investigated.

Model-based sphere localization (MBSL) in x-ray projections.

The detection of spherical markers in x-ray projections is an important task in a variety of applications, e.g. geometric calibration and detector distortion correction.